HVPE-GROWN AlGaN/GaN HEMTs

机译：HVPE-GROWN AlGaN / GaN HEMT

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High quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al_2O_3 substrates is excellent with root-mean-square roughness of ～0.2nm over 10x10μm~2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1um gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

机译：氢化物气相外延（HVPE）技术已经使高质量的非掺杂AlGaN / GaN高电子迁移率晶体管（HEMT）结构成为主流。在Al_2O_3衬底上生长的薄膜的形态非常好，在10x10μm〜2的测量面积上的均方根粗糙度为〜0.2nm。电容电压测量表明在AlGaN / GaN界面处形成了密集的电荷片。在这些结构上制造的栅极长度为1um的HEMT的跨导超过110 mS / mm，漏源电流超过0.6A / mm。栅极滞后测量显示出与MBE或MOCVD生长材料中制造的HEMT相似的电流崩塌特性。

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来源
《Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US》|2003年|P.45-55|共11页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
B. Luo; F. Ren; M. A. Mastro; D. Tsvetkov; A. Pehnikov; V. Soukhoveev; V. Dmitriev; K. H. Baik; S. J. Pearton;
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Department of Chemical Engineering University of Florida, Gainesville, FL 32611;

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正文语种 eng
中图分类材料;
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1. Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates [J] . Yongle Qi, Denggui Wang, Jianjun Zhou, 纳米技术与精密工程（英文） . 2020,第004期
2. RF performance of HVPE-grown AlGaN/GaN HEMTs [J] . M.A. Mastro, D. Tsvetkov, V. Soukhoveev, Solid-State Electronics . 2004,第1期

机译：HVPE生长的AlGaN / GaN HEMT的射频性能
3. Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers [J] . J.K. Gillespie, R.C. Fitch, N. Moser, Solid-State Electronics . 2003,第10期

机译：MBE生长的AlGaN / GaN HEMTS在HVPE生长的缓冲器上的直流和射频性能的均匀性
4. Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process [J] . OLIVIER JARDEL, GUILLAUME CALLET, JEREMY DUFRAISSE, International Journal of Microwave and Wireless Technologies . 2011,第3期

机译：AlInN / GaN HEMT的电性能。与具有类似工艺的AlGaN / GaN HEMT的比较
5. HVPE-Grown AlGaN/GaN HEMTs [C] . B. Luo, F. Ren, M. A. Mastro, Materials Research Society . 2003

机译：HV PE-grown AL Gan/Gan he MTS
6. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
7. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
8. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013

机译：栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明，栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明
9. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. [R] . Tompkins, R. P., Nguyen, D. 2015

机译：si，GaN和alGaN / GaN高电子迁移率晶体管（HEmT）晶片的非接触迁移率，载流子密度和薄层电阻测量。

HVPE-GROWN AlGaN/GaN HEMTs

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