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首页> 外文会议>Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US >Investigation of epitaxial GaN films by conductive atomic force microscopy
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Investigation of epitaxial GaN films by conductive atomic force microscopy

机译：外延GaN薄膜的导电原子力显微镜研究

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摘要

The current conduction in GaN is very topical and is the topic of a vast amount of research. By simultaneously mapping the topography and the current distribution, conductive atomic force microscopy (C-AFM) has the potential to establish a correlation between topological features and localized current paths. In this study, this technique was applied to image the conduction properties of as-grown and post-growth chemically etched samples GaN epitaxial layers on a microscopic scale. Our results show that prismatic planes have a significantly higher conductivity than the surrounding areas of the sample surface. A large and stable local current was mainly observed from the walls of the etched pits, under forward and reverse bias of the metallized AFM tip/semiconductor junction.
机译：GaN中的电流传导非常重要，并且是大量研究的主题。通过同时绘制地形图和电流分布图，导电原子力显微镜（C-AFM）有可能在拓扑特征和局部电流路径之间建立关联。在这项研究中，该技术被用于在微观尺度上对已生长和生长后的化学蚀刻样品GaN外延层的导电特性进行成像。我们的结果表明，棱形平面的电导率明显高于样品表面的周围区域。在金属化AFM尖端/半导体结的正向和反向偏置下，主要从蚀刻凹坑的壁上观察到了大而稳定的局部电流。

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