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首页> 外文会议>Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US >Electrical characterization of defects introduced in 4H-SiC during high energy proton irradiation and their annealing behavior
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Electrical characterization of defects introduced in 4H-SiC during high energy proton irradiation and their annealing behavior

机译：高能质子辐照过程中4H-SiC中引入的缺陷的电学特性及其退火行为

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摘要

We report on the electrical properties of defects introduced in epitaxial 4H-SiC by 2 MeV protons using deep level transient spectroscopy (DLTS). After proton irradiation with a dose of about 1.5x10~(14) cm~(-2), the DLTS measurements were made, and the rate window shows a single broad peak between 280 and 310 K. The intensity of this peak remains unchanged after a thermal anneal at 900℃ for 20 min. However, after annealing at or above 1100℃, the peak intensity gradually decreases with anneal temperature up to 1500℃, indicating a decrease in the defect concentration. Because a complete damage recovery of the SiC is not observed even after annealing at 1500℃, we believe a higher temperature annealing is necessary for a complete recovery. Using a curve fit analysis, a set of deep levels of defect centers were found with energy ranging between 567 and 732 meV. These traps do not exhibit a significant change in the trap energy or capture cross-section parameters as a function of anneal temperature, but the decrease in the trap density with increasing anneal temperature demonstrates a damage recovery.
机译：我们报告了使用深能级瞬态光谱法（DLTS）通过2 MeV质子在外延4H-SiC中引入的缺陷的电学性质。在以约1.5x10〜（14）cm〜（-2）的剂量对质子进行辐照后，进行DLTS测量，速率窗口显示在280至310 K之间的单个宽峰。在900℃下进行20分钟的热退火。然而，在1100℃或更高温度下退火后，峰值强度随着退火温度升高至1500℃而逐渐降低，表明缺陷浓度降低。由于即使在1500℃退火后也未观察到SiC的完全损伤恢复，因此我们认为需要较高温度的退火才能完全恢复。使用曲线拟合分析，发现了一组深层次的缺陷中心，能量范围在567至732 meV之间。这些阱没有表现出阱能或捕获截面参数随退火温度的显着变化，但是随着退火温度的升高，阱密度的降低证明了损伤的恢复。

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