Microstructural characterization of antimonide based III-V compounds and their effect on electro-optical properties of substrate materials and devices

机译：基于锑的III-V化合物的微结构表征及其对基材和器件的电光性能的影响

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This paper presents some of the widely used characterization tools for antimonide based III-V compounds, foucusing on characterization of defects that limit device operation. The effect of microstructure on th electro-optical properties of GaSb and GaInAsSb important in devices is emphasized.

机译：本文介绍了一些基于锑化物的III-V化合物的广泛使用的表征工具，着眼于限制器件工作的缺陷表征。强调了微结构对器件中重要的GaSb和GaInAsSb的电光性能的影响。

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《Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A.》|1999年|p.187-198|共12页
会议地点 Boston MA(US)
作者
P.S.Dutta; R.J.Gutmann; G.W.Charache; C.A.Wang;
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正文语种 eng
中图分类无线电电子学、电信技术;
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4. Microstructural characterization of antimonide based III-V compounds and their effect on electro-optical properties of substrate materials and devices [C] . P. S. Dutta, R. J. Gutmann, G. W. Charache, Symposium on optical microstructural characterization of semiconductors . 2000

机译：基于锑苷酸的III-V化合物的微观结构表征及其对基材和装置电光性能的影响
5. Plasma etching of antimonide based III-V semiconductor materials and device structures. [D] . Langer, Jeffery P. 2005

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6. Hybrid Materials Based on ld-Poly(lactic acid) and Single-Walled Carbon Nanotubes as Flexible Substrate for Organic Devices [O] . Patryk Fryń, Krzysztof Artur Bogdanowicz, Natalia Górska, 2018

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7. Progress in Antimonide Based III-V Compound Semiconductors and Devices [O] . Chao Liu, Yanbo Li, Yiping Zeng 2010

机译：基于锑化物的III-V族化合物半导体和器件的研究进展

Microstructural characterization of antimonide based III-V compounds and their effect on electro-optical properties of substrate materials and devices

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