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首页> 外文会议>Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A. >Homogeneity of thermally-annealed lightly Fe-doped Si InP
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Homogeneity of thermally-annealed lightly Fe-doped Si InP

机译：热退火轻掺杂Fe的Si InP的均质性

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摘要

Lightly Fe-doped semiconducting InP samples have been rendered semi-insulating by thermal annealing and subsequently studied by Hall effect, Sanning Photocurrent (SPC) and Scanning pHotoluminescence (SPL). Hall measurement shows that the semi-insulating conversion is generally associated to an improvement of the mobility. SPL and SPC measurements show that the distribution of both electrically active iron and compensation ratio is homogeneous after annealing. The cooling rate was seen to infuence the compensation ratio.
机译：轻掺杂的半导体InP样品已通过热退火进行半绝缘，随后通过霍尔效应，桑宁光电流（SPC）和扫描pH发光（SPL）进行了研究。霍尔测量表明，半绝缘转化通常与迁移率的提高有关。 SPL和SPC测量表明，退火后，电活性铁的分布和补偿比均一。可以看出冷却速率影响补偿率。

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