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首页> 外文会议>Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A. >Scanning tunneling microscope-induced luminescence studies of deffects in GaN layers and heterostructures
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Scanning tunneling microscope-induced luminescence studies of deffects in GaN layers and heterostructures

机译：扫描隧道显微镜诱导的GaN层和异质结构缺陷的发光研究

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摘要

We present the scanning tunneling microscope-induced liminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of INGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected lambda chemical bounds 356 +- 25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of L_d chemical bounds 30-55 nm, in agreement with reported values. The expected lambda chemical bounds 450 +-35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30-100 nm wide somooth fluctuations of luninescence.
机译：我们介绍了光电材料中的缺陷的扫描隧道显微镜诱导的发光（STL）成像。首先使用INGaAs / GaAs量子点的横截面图像讨论分辨率。然后，通过GaN层和量子阱的纳米级成像提供概念验证。预期的λ化学范围356±25 nm范围主导着GaN的低温STL。发光映射显示了螺纹位错周围的圆形非发光区域。暗区的程度表明，L_d化学范围的空穴扩散长度为30-55 nm，与报道的值一致。预期的450 + -35 nm的λ化学范围控制了来自埋入式InGaN / GaN多量子阱的STL。成像揭示了30-100 nm宽的平滑荧光波动。

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