The Nd-nanocluster coupling strength and its effect in excitation/de-excitation of Nd~(3+) luminescence in Nd-doped silicon-rich silicon oxide

机译：Nd掺杂富硅氧化硅中Nd-纳米簇的耦合强度及其在Nd〜（3+）发光激发/去激发中的作用

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The Nd-nanocluster Si (nc-Si) coupling strength and its effect in excitation/de-excitation of Nd~(3+) luminescence in Nd-doped silicon-rich silicon oxide (SRSO) is investigated. Nd-doped SRSO thin films, which consist of nc-Si embedded inside a SiO_2 matrix, were prepared by electron-cyclotron-resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of SiH_4 and O_2 with co-sputtering of Nd and subsequent anneal at 950℃. Efficient Nd~(3+) luminescence with moderate temperature quenching is observed. Based on the temperature dependence of Nd~(3+) luminescence lifetime, a coupling strength between nc-Si and Nd that is strong enough to result in efficient excitation of Nd~(3+) via quantum confined excitons while weak enough to result in a small back-transfer rate is identified as the key to Nd~(3+) luminescence.

机译：研究了Nd掺杂富硅氧化硅（SRSO）中Nd-纳米簇Si（nc-Si）的耦合强度及其在Nd〜（3+）发光激发/去激中的作用。通过SiH_4和O_2的电子回旋共振等离子体增强化学气相沉积（ECR-PECVD），以及Nd的共溅射和随后的退火，制备了Nd掺杂的SRSO薄膜，该薄膜由嵌入SiO_2基体内的nc-Si组成。在950℃。观察到Nd〜（3+）发光具有适度的温度猝灭。基于Nd〜（3+）发光寿命的温度依赖性，nc-Si和Nd之间的耦合强度足够强，可以通过量子约束激子有效激发Nd〜（3+），而足够弱，可以导致较小的反向传输速率被认为是Nd〜（3+）发光的关键。

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《Symposium on Optoelectronics of Group-IV-Based Materials; 20030421-20030424; San Francisco,CA; US》|2003年|P.125-130|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
Se-Young Seo; Jung H. Shin;
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Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1～Kusung-dong, Yusung-gu, Taejon, Korea;

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正文语种 eng
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The Nd-nanocluster coupling strength and its effect in excitation/de-excitation of Nd~(3+) luminescence in Nd-doped silicon-rich silicon oxide

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