On the role of Yb as an impurity in the excitation of Er~(3+) emission in silicon-rich silicon oxide

A. Kozanecki; D. Kuritsyn; W. Jantsch

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On the role of Yb as an impurity in the excitation of Er~(3+) emission in silicon-rich silicon oxide

机译：Yb作为富含硅氧化硅（3+）发射激发的杂质的作用

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The aim of this work is to check if Yb~(3+) ions can be used as sensitizers for the ~4I_(13/2)-~4I_(15/2) emission of Er~(3+) ions at 1.54 μm in silicon-rich silicon oxide (SRSO). To answer this question, photoluminescence excitation (PLE) experiments were performed on the Er~(3+) emission in a wide range of excitation wavelengths. The PLE spectra in the 420-650 nm range were excited using an optical parametric oscillator. In Er + Yb implanted silica we found an absorption band related to Yb at wavelengths shorter than 530 nm. Radiation defects were excluded as absorbing species in this range of wavelengths. In SRSO PLE by Yb is entirely suppressed by absorption due to silicon nanoclusters. As a result we conclude that Yb doping of SRSO:Er does not improve the PL efficiency of Er~(3+) in comparison with SRSO:Er. We interpret a sensitization mechanism by Yb in the UV-green range in terms of the Yb~(2+) → Yb~(3+) recharging process, in which an Yb ion becomes excited into its 2+ state, leaving a hole, h_(VB). localized near Yb~(2+). Recombination with a hole leaves Yb~(3+) in its ~2F_(5/2) excited state from which energy is very efficiently transferred to Er~(3+) ions.

机译：这项工作的目的是检查Yb〜（3+）离子是否可以用作〜4i_（13/2） - 〜4i_（15/2）的敏化剂ER〜（3+）离子的〜1.54μm在富含硅氧化硅（SRSO）中。为了回答这个问题，在各种激发波长的ER〜（3+）发射中进行光致发光激发（PLE）实验。使用光学参数振荡器激发420-650nm范围内的PLE光谱。在ER + Yb植入二氧化硅中，我们发现与短于530nm的波长的YB相关的吸收带。辐射缺陷被排除为在该波长范围内的吸收物种。在SRSO PLE通过Yb，由于硅纳米团簇的吸收完全抑制。结果，我们得出结论，与SRSO：ER相比，SRSO的YB掺杂不提高ER〜（3+）的PL效率。在Yb〜（2+）→（3+）再充电过程中，通过紫外线范围在紫外线范围内解释敏化机制，其中Yb离子变成其2+状态，留下孔， h_（vb）。局部靠近YB〜（2+）。用孔重组在其〜2F_（5/2）激发状态下留下Yb〜（3+），从中能量非常有效地转移到ER〜（3+）离子。

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来源
《Optical Materials》 |2006年第7期|p.850-854|共5页
作者
A. Kozanecki; D. Kuritsyn; W. Jantsch;
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作者单位

Institute of Physics Polish Academy of Sciences Al. Lotnikow 32/46 02-668 Warsaw Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类工程材料学;
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4. Defect mediated and resonant optical excitation of Er~(3+) ions in silicon-rich silicon oxide [C] . D. Kuritsyn, A. Kozanecki, H. Przybylinska, Symposium on Optoelectronics of Group-IV-Based Materials; 20030421-20030424; San Francisco,CA; US . 2003

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On the role of Yb as an impurity in the excitation of Er~(3+) emission in silicon-rich silicon oxide

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