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首页> 外文会议>Symposium on Organic and Polymeric Materials and Devices―Optical, Electrical and Optoelectronic Properties Apr 1-5, 2002 San Francisco, California, U.S.A. >Influence of potential barrier materials on device performance
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Influence of potential barrier materials on device performance

机译：势垒材料对器件性能的影响

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摘要

An organic light-emitting device (OLED) having a double-heterostructure of ITO/NPB/DCM-doped Alq_3/BCP/Alq_3/MgAg was constructed to form a narrow recombination zone where both charge carriers and excitons are confined, thus resulting in efficient electron-hole recombination and energy transfer. It was found that though luminance efficiency was enhanced, the low electron mobility of BCP resulted in higher driving voltages and limited the improvement of power efficiency. Significant improvements on both quantum efficiency and power efficiency were achieved by replace l,3,5-tri(phenyl-2-benzimidazoly)-benzene (TPBI) for BCP, and were correlated with its high electron mobility. Device performance was further improved in the structure ITO/NPB/DCM-doped Alq_3/TPBI/LiF/MgAg with a maximum luminance efficiency 6.03cd/A and a power efficiency of 5.94 Im/W.
机译：构造具有ITO / NPB / DCM掺杂的Alq_3 / BCP / Alq_3 / MgAg的双异质结构的有机发光器件（OLED），以形成一个狭窄的复合区，在该复合区中，载流子和激子都被限制，从而实现了高效的发光。电子-空穴复合和能量转移。发现虽然提高了发光效率，但是BCP的低电子迁移率导致更高的驱动电压并限制了功率效率的提高。通过取代BCP的1,3,5-三（苯基-2-苯并咪唑基）-苯（TPBI），实现了量子效率和功率效率的显着提高，并与其高电子迁移率相关。掺杂ITO / NPB / DCM的Alq_3 / TPBI / LiF / MgAg结构的器件性能得到了进一步提高，最大发光效率为6.03cd / A，功率效率为5.94 Im / W。

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