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首页> 外文会议>Symposium on Power Semiconductor Materials and Devices December 1-4, 1997, Boston, Massachusetts, U.S.A. >Dielectrics for GaN based MIS-diodes
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Dielectrics for GaN based MIS-diodes

机译：GaN基MIS二极管的电介质

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摘要

GaN MIS diodes were demonstrated utilizing AlN and Ga_2O_3(Cd_2O_3) as insulators. A 345 A of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N_2 plasma. For the Ga_2O_3(Gd_2O_3) growth, a multi-MBE chamber was used and a 195 A oxide is E-BEAM EVAPORATED RM A SINGLE CRYSTAL SOURCE OF gA_5gD_3O_(12). The forware breakdown voltage of alN and ga_2O_3 (Gd_2O_3) diodes are 5V and 6V, respectively, which are significantly improved from approx 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge mdoulation from accumulation to depletion at different frequencies. The insulator/GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.
机译：使用AlN和Ga_2O_3（Cd_2O_3）作为绝缘体演示了GaN MIS二极管。在MOMBE系统中，使用三甲胺铝烷作为Al前驱体，并从波谱ECR N_2等离子体中产生氮，在345 MB的MOCVD生长的n-GaN上生长345 A的AlN。对于Ga_2O_3（Gd_2O_3）的生长，使用了多MBE腔室，并且用195 A氧化物对电子束蒸发了gA_5gD_3O_（12）的单晶源。 AlN和ga_2O_3（Gd_2O_3）二极管的前期击穿电压分别为5V和6V，相对于约1.2 V的肖特基接触有明显改善。从C-V测量来看，两种二极管在不同频率下都显示出从累积到耗尽的良好电荷控制。用X射线反射率测量绝缘体/ GaN界面的粗糙度和绝缘体的厚度。

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