PLD epitaxial TiN contacts to 6H-SiC and GaN

机译：PLD外延TiN接触6H-SiC和GaN

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We have investigated the influence of TiN growth temperature on the contact resistance in STiN/SiC and TiN/GaN heterostructures. Epitaxial TiN layers grown at temperatures above 600 deg C formed low resistance contacts of n-type 6H-SiC and GaN of 1.1x 10~(-5) OMETA cm~2 and 7.0 x 10~(-5) OMETA cm~2, respectively. Structural and electrical characterization of TiN thin films is discussed.

机译：我们研究了TiN生长温度对STiN / SiC和TiN / GaN异质结构中接触电阻的影响。在高于600摄氏度的温度下生长的外延TiN层形成了n型6H-SiC和GaN的低电阻触点，GaN的1.1x 10〜（-5）OMETA cm〜2和7.0 x 10〜（-5）OMETA cm〜2，分别。讨论了TiN薄膜的结构和电学特性。

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《Symposium on Power Semiconductor Materials and Devices December 1-4, 1997, Boston, Massachusetts, U.S.A.》|1997年|p.235-239|共5页
会议地点 Boston MA(US)
作者
V.Talansky; R.D.Vispute; S.N.Andronescu; A.A.Iliadis; K.A.Jones; S.Choopun; M.J.Downes; R.P.Sharma; TVenkatesan; Y.X.Li; L.G.Salamanca-Riba; M.C.Wood; R.a.Lareau;
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正文语种 eng
中图分类无线电电子学、电信技术;
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机译：GaN衬底上的AlGaN / GaN外延层上的基于Ti / Al的欧姆接触的界面反应的表征
3. Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001) [J] . L Neumann, J.W. Gerlach, B. Rauschenbach Thin Solid Films . 2012,第11期

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4. PLD epitaxial TiN contacts to 6H-SiC and GaN [C] . V.Talansky, R.D.Vispute, S.N.Andronescu, Symposium on power semiconductor materials and devices . 1998

机译：PLD外延锡接触到6H-SIC和GAN
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

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6. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD [O] . Wenliang Wang, Haiyan Wang, Weijia Yang, -1

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机译：6H-SiC表面重构对GaN分子束外延生长中AlN缓冲层晶格弛豫的影响
8. Defects and Impurities in 4H- and 6H-SiC Homoepitaxial Layers: Identification, Origin, Effect on Properties of Ohmic Contacts and Insulating Layers and Reduction [R] . Davis, R. F. , Aboelfotoh, M. O. , Baliga, B. J. , 1998

机译：4H-和6H-siC同质外延层中的缺陷和杂质：识别，起源，对欧姆接触和绝缘层性能的影响和还原

PLD epitaxial TiN contacts to 6H-SiC and GaN

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