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首页> 外文会议>Symposium Proceedings vol.808; Symposium on Amorphous and Nanocrystalline Silicon Science and Technology - 2004; 20040413-16; San Francisco,CA(US) >Metastability in Undoped Microcrystalline Silicon Thin Films Deposited by HWCVD
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Metastability in Undoped Microcrystalline Silicon Thin Films Deposited by HWCVD

机译：HWCVD沉积未掺杂微晶硅薄膜的亚稳性

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摘要

Films deposited by the Hot Wire CVD method were studied by means of dark conductivity, FTIR, Hydrogen Evolution, SEM and AFM surface characterization. Three types of metastability were observed: a) long term irreversible degradation due to oxidization processes on the film surface, b) reversible degradation determined by uncontrolled water adsorption, c) fast field switching effect in the film bulk. Oxygen and hydrogen content and its bonding configurations have been analyzed by hydrogen evolution and infrared spectroscopy methods on the films deposited on glass substrates and silicon wafers subsequently. It has been found that metastable processes close to the film surface are stronger than in the bulk. The switching effect is the fast increase of charge carrier density observed on bottom chromium contacts under a condition of air admittance. We propose this effect is associated with morphology changes during film growth and electrical field induced by adsorbed atmospheric components on the film surface.
机译：通过暗电导率，FTIR，析氢，SEM和AFM表面表征研究了通过热线CVD法沉积的薄膜。观察到三种类型的亚稳态：a）由于膜表面的氧化过程引起的长期不可逆降解，b）由不受控制的水吸附确定的可逆降解，c）膜体中的快速场转换效应。随后，通过析氢和红外光谱法对沉积在玻璃基板和硅晶片上的薄膜上的氧和氢含量及其键合构型进行了分析。已经发现，靠近薄膜表面的亚稳态过程比整体过程更强。开关效应是在空气进入条件下在底部铬触点上观察到的电荷载流子密度的快速增加。我们认为，这种效应与薄膜生长过程中的形态变化以及薄膜表面吸附的大气成分诱导的电场有关。

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