Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a-plane SiC Substrates

机译：a平面SiC衬底上非极性III型氮化物膜的金属有机化学气相沉积

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We report progress in growing non-polar a-plane Ill-nitride films and heterostructures over a-plane 4H-SiC. a-plane SiC is more closely lattice-matched to a-plane GaN than is r-plane sapphire. Consequently, better structural quality a-plane nitride films may result over a-plane SiC substrates. By migration enhanced metalorganic chemical vapor deposition (MEMOCVD), an atomically smooth (1120)AlN layer with RMS roughness of 0.3nm was obtained. From the results of XRD, the structural defects in the AlN layer on SiC substrates were strongly reduced compared to those grown on r-plane sapphire. Also by applying our selective area lateral epitaxy (SALE) growth procedure, we achieved high structural and optical quality a-plane GaN films on 4H-SiC with RMS roughness only 0.4nm. Therefore, non-polar III-nitride films and heterostructures on SiC substrates are promising building blocks for realizing high performance polarization-free devices.

机译：我们报告了在a平面4H-SiC上生长非极性a平面III族氮化物膜和异质结构的进展。与r面蓝宝石相比，a面SiC与a面GaN的晶格匹配更紧密。因此，可以在a面SiC衬底上产生更好的结构质量的a面氮化物膜。通过迁移增强的金属有机化学气相沉积（MEMOCVD），获得了具有0.3nm RMS粗糙度的原子平滑（1120）AlN层。根据XRD的结果，与在r面蓝宝石上生长的AlN层相比，SiC衬底上的AlN层中的结构缺陷得到了大大降低。同样，通过应用我们的选择性区域横向外延（SALE）生长程序，我们在4H-SiC上获得了高结构和光学质量的a面GaN膜，RMS粗糙度仅为0.4nm。因此，SiC衬底上的非极性III氮化物膜和异质结构是实现高性能无偏振器件的有希望的基础。

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《Symposium Proceedings vol.831; Symposium on GaN, AIN, InN and Their Alloys; 20041129-1203; Boston,MA(US)》|2004年|P.87-92|共6页
会议地点 BostonMA(US)
作者
Jiawei Li; Zheng Gong; Changqing Chen; Vinod Adivarahan; Mikhail Gaevski; Edmundas Kuokstis; Maxim Shatalov; Ying Gao; Zehong Zhang; Arul Arjunan; T. S. Sudarshan; H. Paul Maruska; Jinwei Yang; M. Asif Khan;
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Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.;

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正文语种 eng
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1. Effects of carrier gas on the stress of a-plane GaN films grown on r-plane sapphire substrates by metalorganic chemical vapor deposition [J] . Dongsheng Li, H. Chen, H.B. Yu, Journal of Crystal Growth . 2004,第1a4期

机译：载气对金属有机化学气相沉积在r面蓝宝石衬底上生长的a面GaN膜应力的影响
2. Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition [J] . M. D. Craven, F. Wu, A. Chakraborty, Applied Physics Letters . 2004,第8期

机译：金属有机化学气相沉积在a面SiC上生长a面GaN的组织演变
3. Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants [J] . Dongjin Won, Xiaojun Weng, Joan M. Redwing Applied Physics Letters . 2012,第2期

机译：使用铟表面活性剂在邻近SiC衬底上的N极性GaN膜的金属有机化学气相沉积
4. Metalorganic Chemical Vapor Deposition of Non-polar Ill-Nitride Films over a-plane SiC Substrates [C] . Jiawei Li, Zheng Gong, Changqing Chen, Symposium on GaN, AIN, InN and Their Alloys . 2005

机译：在平面SiC基材上的非极性氮化物膜的金属化学化学气相沉积
5. Van der Waals Epitaxy of Cadmium Telluride Thin Films on 2D Substrates Using Metalorganic Chemical Vapor Deposition [D] . Mohanty, Dibyajyoti. 2018

机译：金属有机化学气相沉积法在2D衬底上碲化镉薄膜的Van der Waals外延
6. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition [O] . Shuxian Cai, Zhonghua Liu, Ni Zhong, 2015

机译：乙烯化学气相沉积法生长压力对4H-SiC衬底上生长的外延石墨烯的影响
7. Non-polar m -plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition [O] . X. Ni, M. Wu, J. Lee, 2010

机译：由金属化学气相沉积的图案化Si（112）衬底上的非极性M-平面GaN

Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a-plane SiC Substrates

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