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首页> 外文会议>Symposium Proceedings vol.839; Symposium on Electron Microscopy of Molecular and Atom-Scale Mechanical Behavior, Chemistry and Structure; 20041129-1201; Boston,MA(US) >Electron Holography as a Tool for Dopant Profile Characterization of Semiconductor Devices
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Electron Holography as a Tool for Dopant Profile Characterization of Semiconductor Devices

机译：电子全息术作为半导体器件掺杂轮廓表征的工具

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摘要

We used electron holography to analyze the dopant profile in a MOS transistor. The overall performance of the holography electron microscope at our laboratory has been confirmed by recording a maximum of 16,000 numbers of electron interference fringes on a conventional electron microscope film. For thin film specimen preparation, we have developed an FIB system with a modified beam scanning scheme in which a high-frequency analog modulation signal is added to the digital signal of the beam deflector. This has enabled us to smooth the residual surface roughness presumably caused by the glitch-noise of D/A converter and we proved that a nearly atomically smooth surface was obtained as estimated with an AFM and TEM. We used this optimized system to characterize the dopant profile in MOS transistors, and comparisons with the calculated profiles from device simulator have proved that they are in good agreement.
机译：我们使用电子全息术来分析MOS晶体管中的掺杂剂分布。通过在常规电子显微镜胶片上记录最多16,000个电子干涉条纹，可以证实我们实验室全息电子显微镜的整体性能。对于薄膜样品的制备，我们开发了具有改进的光束扫描方案的FIB系统，其中将高频模拟调制信号添加到光束偏转器的数字信号中。这使我们能够平滑可能由D / A转换器的毛刺噪声引起的残留表面粗糙度，并且证明了通过AFM和TEM估计可获得接近原子的平滑表面。我们使用了这种优化的系统来表征MOS晶体管中的掺杂剂分布，并且与器件仿真器计算出的分布进行比较，证明它们具有良好的一致性。

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