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首页> 外文会议>Symposium Proceedings vol.839; Symposium on Electron Microscopy of Molecular and Atom-Scale Mechanical Behavior, Chemistry and Structure; 20041129-1201; Boston,MA(US) >In situ HREM Study on the Thermal Stability of Atomic Layer Epitaxy Grown InAs/GaAs Quantum Dots
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In situ HREM Study on the Thermal Stability of Atomic Layer Epitaxy Grown InAs/GaAs Quantum Dots

机译：InAs / GaAs量子点生长的原子层外延热稳定性的原位HREM研究

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摘要

Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy technique and the structure and the thermal stability of QDs have been studied by using high resolution electron microscopy with in-situ heating experiment capability. The QDs were found to form a hemispherical structure with {136} side facet in the early stage of growth. The average height and diameter of the QD were found to be ～5.5 nm and ～23 nm, respectively. Upon capping by GaAs layer, however, the apex structure of QD changed to a flat one. In-situ heating experiment within TEM revealed that the uncapped QD remained stable until 580℃. However, at temperature above 600℃, the QD structure became flat due to the fast decrease of QD height. After flattening, the atoms diffused from the InAs QD to the GaAs substrate, resulting in the total collapse. The density of the QD decreased abruptly by this collapse and most QDs disappeared at above 600℃.
机译：通过原子层外延技术生长自组装的InAs / GaAs量子点（QDs），并利用具有原位加热实验能力的高分辨率电子显微镜研究了QDs的结构和热稳定性。发现在生长的早期，量子点形成具有{136}侧面的半球形结构。量子点的平均高度和直径分别为〜5.5 nm和〜23 nm。然而，在被GaAs层覆盖时，量子点的顶点结构变为平坦的。 TEM内部的原位加热实验表明，未封端的量子点在580℃之前都保持稳定。然而，在600℃以上的温度下，由于QD高度的快速下降，QD结构变得平坦。展平后，原子从InAs量子点扩散到GaAs衬底，导致整体塌陷。塌陷使量子点的密度突然下降，在600℃以上，大多数量子点消失了。

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