Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots

机译：单半导体量子点近场光谱中的局部应变效应

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Experimental and theoretical investigations of high-energy shifts of single InAs, InGaAs, InAlAs and InP quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip are reported. "Pressure" coefficients of 0.65-3.5 meVm have been measured for ground state emission lines in agreement with numerical calculations. We show that the observed increase of the tip-induced energy shift with increasing aperture diameter is caused by a decrease of the uniaxial strain component. We also report the effect of emission instability of single QD emission intensity under tip-induced pressure.

机译：报告了由近场光纤尖端施加的接触压力引起的单个InAs，InGaAs，InAlAs和InP量子点（QD）发射线的高能位移的实验和理论研究。与数值计算相一致，已测量了基态发射线的0.65-3.5 meV / nm的“压力”系数。我们表明，观察到的尖端诱导的能量移动随孔径的增加而增加是由单轴应变分量的减少引起的。我们还报告了尖端诱发压力下单个QD发射强度的发射不稳定性的影响。

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《Symposium on Quantum Confined Semiconductor Nanostructures Dec 2-5, 2002 Boston, Massachusetts, U.S.A.》|2002年|p.59-64|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
A. M. Mintairov; P. A. Blagnov; O. V. Kovalenkov; C. Li; J. L. Merz; S. Oktyabrsky; K. Sun; V. Tokranov; A. S. Vlasov; D. A. Vinokurov;
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Electrical Engineering Department, University of Notre Dame, Notre Dame, IN 46556, USA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Control of Wigner localization and electron cavity effects in near-field emission spectra of In(Ga)P/GaInP quantum-dot structures [J] . A. M. Mintairov, J. Kapaldo, J. L. Merz, Physical review . 2018,第19期

机译：In（Ga）P / GaInP量子点结构近场发射光谱中的Wigner定位和电子腔效应的控制
2. Control of Wigner localization and electron cavity effects in near-field emission spectra of In(Ga)P/GaInP quantum-dot structures [J] . Mintairov A. M., Kapaldo J., Merz J. L., Physical review, B . 2018,第19期

机译：控制（GA）P / GAINP量子点结构近场发射光谱中的Wigner定位和电子腔效应
3. Surface effects in a semiconductor photonic nanowire and spectral stability of an embedded single quantum dot [J] . Inah Yeo, Nitin S. Malik, Mathieu Munsch, Applied Physics Letters . 2011,第23期

机译：半导体光子纳米线中的表面效应和嵌入式单量子点的光谱稳定性
4. Local Strain Effects in Near-Field Spectra ofa Single Semiconductor Quantum Dots [C] . A.M.Mintairov, P.A.Blagnov, O.V.Kovalenkov, Materials Research Society Symposium . 2003

机译：单半导体量子点近场光谱中的局部应变效应
5. Conductive atomic force microscopy study of single semiconductor quantum dots and quantum dot aggregates. [D] . Wang, Tuo. 2014

机译：单个半导体量子点和量子点聚集体的导电原子力显微镜研究。
6. Quantum Dots: Single Halide Perovskite/Semiconductor Core/Shell Quantum Dots with Ultrastability and Nonblinking Properties (Adv. Sci. 18/2019) [O] . Xiaosheng Tang, Jie Yang, Shiqi Li, 2019

机译：量子点：具有超稳定性和非闪烁特性的单卤化物钙钛矿/半导体核/壳量子点（Adv。Sci。18/2019）
7. Local absorption spectra of single and coupled semiconductor quantum dots [O] . C. D. Simserides, U. Hohenester, G. Goldoni, 2015

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8. High Resolution Optical Spectroscopy of Single Quantum Dots and Cavity- QED Effects and Lasing in Quantum Dot Microdisk Resonator Structures [R] . Sercel, P. C. 2000

机译：量子点微盘谐振器结构中单量子点的高分辨率光谱和腔QED效应和激光

Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots

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