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Control of Wigner localization and electron cavity effects in near-field emission spectra of In(Ga)P/GaInP quantum-dot structures

机译:In(Ga)P / GaInP量子点结构近场发射光谱中的Wigner定位和电子腔效应的控制

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摘要

Structural and emission properties of few-electron ln(Ga)P/GaInP quantum dots (QDs) representing natural Wigner molecules (WM) and whispering gallery mode (WGM) electron (e) cavities have been investigated. QD structures were grown using self-organized metal-organic vapor phase epitaxy and deposition from ~3 to 7 monolayers of InP at 700 C. Using atomic force microscopy, transmission electron microscopy, near-field scanning optical microscopy (NSOM), and /(-photoluminescence (μ-PL) spectra we obtained ln(Ga)P/GaInP QDs having lateral size 80-180 nm. height 5-30 nm, Ga content 0.0-0.4, density 2—10 μm~(-2), and electron population up to 20 and demonstrated control of their density and size distribution. Using high-spatial-resolution low-temperature PL spectra, NSOM imaging, and calculations of charge density distributions we observed Wigner localization and e-cavity effects for a series of dots having quantum confinement hω_0 = 0.5—6meV. We used these data together with time-resolved PL measurements to clarify the effect of Coulomb interaction and WM formation on emission spectra of few-electron QDs. We present direct observation of 2e, be, and 9e WMs; 2e and 4c WGMs; and Fabry-Perot e modes and establish conditions of e-WGM-cavity formation in these QDs.
机译:研究了代表天然维格纳分子(WM)和耳语画廊模式(WGM)电子(e)腔的少数电子ln(Ga)P / GaInP量子点(QD)的结构和发射特性。使用自组织的金属有机气相外延生长QD结构,并在700°C下沉积约3至7个InP单层。使用原子力显微镜,透射电子显微镜,近场扫描光学显微镜(NSOM)和/( -光致发光(μ-PL)光谱,我们获得了ln(Ga)P / GaInP QD,其横向尺寸为80-180 nm,高度为5-30 nm,Ga含量为0.0-0.4,密度为2-10μm〜(-2),并且最多可容纳20个电子,并证明了其密度和尺寸分布的控制。使用高空间分辨率的低温PL光谱,NSOM成像和电荷密度分布的计算,我们观察到了一系列点的Wigner定位和电子腔效应具有量子约束hω_0= 0.5-6meV。我们将这些数据与时间分辨的PL测量一起使用来阐明库仑相互作用和WM形成对少数电子量子点发射光谱的影响。我们直接观察2e,be和9e WM; 2e和4c WGM;以及Fabry-Perot e mod并在这些量子点中建立e-WGM腔的形成条件。

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  • 来源
    《Physical review》 |2018年第19期|195443.1-195443.9|共9页
  • 作者单位

    University of Noire Dame, Notre Dame, Indiana 46556, USA,Ioffe Physical-Technical Institute of the Russian Academy of Sciences. Saint Petersburg 194021, Russia;

    University of Noire Dame, Notre Dame, Indiana 46556, USA;

    University of Noire Dame, Notre Dame, Indiana 46556, USA;

    University of Noire Dame, Notre Dame, Indiana 46556, USA;

    University of Noire Dame, Notre Dame, Indiana 46556, USA;

    Ioffe Physical-Technical Institute of the Russian Academy of Sciences. Saint Petersburg 194021, Russia;

    Ioffe Physical-Technical Institute of the Russian Academy of Sciences. Saint Petersburg 194021, Russia;

    Ioffe Physical-Technical Institute of the Russian Academy of Sciences. Saint Petersburg 194021, Russia;

    Ioffe Physical-Technical Institute of the Russian Academy of Sciences. Saint Petersburg 194021, Russia;

    Ioffe Physical-Technical Institute of the Russian Academy of Sciences. Saint Petersburg 194021, Russia;

    Ioffe Physical-Technical Institute of the Russian Academy of Sciences. Saint Petersburg 194021, Russia;

    Ioffe Physical-Technical Institute of the Russian Academy of Sciences. Saint Petersburg 194021, Russia;

    Ioffe Physical-Technical Institute of the Russian Academy of Sciences. Saint Petersburg 194021, Russia;

    University Grenoble Alpes, CEA, Centre National de la Recherche Scientifique, INAC, SyMMES, F-38000 Grenoble, France;

    Sainl Petersburg Academic University, 194021 Saint Petersburg, Russia;

    Sainl Petersburg Academic University, 194021 Saint Petersburg, Russia;

    SUNY, Albany, New York 12222, USA;

    SUNY, Albany, New York 12222, USA;

    NT-MDT, Co., Zelenograd, Moscow 124460, Russia;

    NT-MDT, Co., Zelenograd, Moscow 124460, Russia;

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