首页> 外文会议>Symposium on Radiation Effects and Ion-Beam Processing of Materials; 20031201-20031205; Boston,MA; US >Localized Charging Effects Resulting From Focused Ion Beam Processing Of Non-Conductive Materials
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Localized Charging Effects Resulting From Focused Ion Beam Processing Of Non-Conductive Materials

机译:非导电材料聚焦离子束加工产生的局部充电效应

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摘要

Focused Ion Beam (FIB) systems employ a finely focussed beam of positively charged ions to process materials. Ion induced charging effects in non-conductive materials have been confirmed using Scanning Surface Potential Microscopy (SSPM). Significant localized residual charging is observed within the ion implanted micro-volumes of non-conductive materials both prior to and following the onset of sputtering. Characteristic observed surface potentials associated with the resultant charging have been modelled, giving insight into the charging processes during implantation and sputtering. The results of this work have implications for the processing and microanalysis of non-conductive materials in FIB systems.
机译:聚焦离子束(FIB)系统采用带正电荷离子的精细聚焦束来处理材料。使用扫描表面电位显微镜(SSPM)已经确认了非导电材料中的离子感应带电效应。在溅射开始之前和之后,在非导电材料的离子注入微体积内观察到明显的局部残留电荷。已对与所得电荷相关的特征性观察到的表面电势进行了建模,从而洞悉了注入和溅射过程中的电荷过程。这项工作的结果对FIB系统中非导电材料的处理和微分析有影响。

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