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首页> 外文会议>Symposium on Silicon Front-End Junction Formation Technologies, Apr 2-4, 2002, San Francisco, California >Junction and Profile Analysis using Carrier Illumination
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Junction and Profile Analysis using Carrier Illumination

机译：使用载波照明的结点和轮廓分析

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摘要

Carrier Illumination~(TM) (CI) is an optical technique for non-destructive in-line monitoring of post-anneal junction depth and pre-anneal PAI depth and dose with wafer mapping capabilities. This work intends to extend the use of the Cl-measurements from a range-specific quantitative measurement towards a more universal quantitative analysis of junction depth, profile abruptness and implant dose. For that purpose this paper presents a systematic study of the CI response to a wide variety of post anneal implant processes, varying parameters including implant species, dose and energy, annealing condition, and surface preparation. Samples containing B, BF_2 and As-implants with and without Ge PAI layers, with junction depths between 10-120 nm, were measured. In addition near-ideal box-like profiles (as obtained with CVD-growth) were fabricated and measured. For the abrupt CVD profiles, CI measures the junction position with sub-nm resolution independent of the CI-analysis conditions. For more graded profiles resulting from annealed implants, the correlation to the SIMS junction depth becomes a function of generation laser current (which is proportional to the applied power). As the concentration level, at which the correlation is made, can be adjusted over a concentration range of approximately 2x10~(18) to 2x10~(19)/cm~3 by changing the laser current, a route towards correlating the CI measurement with profile abruptness becomes feasible.
机译：载流子照度（TM）（CI）是一种光学技术，可通过晶片映射功能对退火后的接合深度，退火前的PAI深度和剂量进行无损在线监测。这项工作旨在将Cl测量的使用从特定范围的定量测量扩展到对接合深度，轮廓突变和植入物剂量的更通用定量分析。为此，本文介绍了对多种退火后注入工艺，不同参数（包括注入种类，剂量和能量，退火条件和表面处理）的CI反应的系统研究。测量了含有B，BF_2和As植入物的样品，这些样品有和没有Ge PAI层，结深度在10-120 nm之间。另外，制造和测量接近理想的盒状轮廓（如通过CVD生长获得的）。对于突然的CVD轮廓，CI以低于nm的分辨率测量结位置，而与CI分析条件无关。对于由退火的植入物产生的更渐变的轮廓，与SIMS结深度的相关性成为产生激光电流的函数（与施加的功率成比例）。通过改变激光电流，可以在大约2x10〜（18）至2x10〜（19）/ cm〜3的浓度范围内调整进行相关的浓度水平，这是将CI测量与轮廓突变变得可行。

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