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首页> 外文会议>Symposium on In Situ Process Diagnostics and Intelligent Materials Processing held December 2-5, 1997, Boston, Massachusetts, U.S.A. >Atomic-scale analysis of laser mbe growth of oxide thin films by in situ rheed and caiciss
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Atomic-scale analysis of laser mbe growth of oxide thin films by in situ rheed and caiciss

机译：原位Rhee和Caiciss原子尺度分析激光薄膜生长的MBE

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摘要

Atomic-scale growth analysis of oxide thin films was performed by in situ reflection high energy electron diffraction (RHEED) and coaxial impact collision ion scattering spectroscopy (CAICISS) combined with Laser MBE. On single crystal substrates with atomically flat terrace and step structures, the two-dimensional nucleation followed by molecular layer-by-layer growth was verified by in situ monitoring of RHEED intensity oscillations, as well as ex situ atomic force microscopy (AFM) observation, for the growth of BaTiO_3, Al_2O_3 and BaO thin films. The epitaxial BaTiO_3 films grown on SrTiO_3(100) and c-axis oriented Bi_2Sr_2CaCu_2O_x (Bi2212) superconducting films were subjected to in situ CAICISS measurements in order to examine the topmost surface structure. The key factors to develop oxide lattice engineering are discussed with respect to not only in situ monitoring of the growth process using RHEED but also the atomic regulation of the substrate surface by AFM and ion scattering spectroscopy. The present work also demonstrates the advanced oxide thin film processing based on the laser MBE to control the growth and surface of films on an atomic scale.
机译：通过原位反射高能电子衍射（RHEED）和同轴碰撞碰撞离子散射光谱（CAICISS）结合激光MBE进行了氧化物薄膜的原子尺度生长分析。在具有原子平坦平台和阶梯结构的单晶衬底上，通过原位监测RHEED强度振荡以及非原位原子力显微镜（AFM）观察，验证了二维成核和随后逐层生长的分子，用于生长BaTiO_3，Al_2O_3和BaO薄膜。对SrTiO_3（100）上生长的外延BaTiO_3膜和c轴取向的Bi_2Sr_2CaCu_2O_x（Bi2212）超导膜进行原位CAICISS测量，以检查其最表面的结构。讨论了开发氧化物晶格工程的关键因素，不仅涉及使用RHEED进行生长过程的原位监测，还涉及通过AFM和离子散射光谱对衬底表面进行原子调控。本工作还展示了基于激光MBE的先进氧化物薄膜处理技术，可控制原子级薄膜的生长和表面。

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