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首页> 外文会议>Symposium on In Situ Process Diagnostics and Intelligent Materials Processing held December 2-5, 1997, Boston, Massachusetts, U.S.A. >Material balance modeling of end-point uniformity in silicon dioxide plasma etching
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Material balance modeling of end-point uniformity in silicon dioxide plasma etching

机译：二氧化硅等离子体蚀刻中终点均匀性的材料平衡建模

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As wafer diameters increase, monitor wafers become more costly for process characterization and real-time sensors become more attractive. Process-state sensors are generally easier to implement than direct wafer-state sensors, but process-state sensors are usually not thought to provide wafer-state analysis. Utilizing a process-state sensor, such as a mass spectrometer, for wafer-state information will result in new approaches for sensing, optimizing, and controlling integrated circuit fabrication processes. We used a two stage differentially pumped mass spectrometer system sampling directly from an electron cyclotron resonance (ECR) chamber to sense the process-state and monitor end-point during silicon dioxide etch. The end-point uniformity is characterized using mass spectroscopy and material balance modeling. Specifically, using CF_4 and D_2 etch gases, the partial pressure of CO-containing etch products decays near the endpoint, and the average initial slope is directly correlated with the uniformity determined from optical interferometry thickness measurements. Changing the ECR magnet geometry defines the etch uniformity, and the resulting CO~+ end-point signal is sensed with the mass spectrometer. By analyzing the initial slope of the CO~+ signal near the end-point, a correlation exists between uniformity and the mass spectrometry signal. A COF_2 etch product material balance provides a concentration versus time end-point model which substantiates the correlation between the mass spectrometer signal and the etch uniformity. This model is valid for any sensor that detects a change in the COF_2 concentration at the end-point.
机译：随着晶圆直径的增加，监控晶圆的工艺表征成本越来越高，实时传感器变得越来越有吸引力。工艺状态传感器通常比直接晶圆状态传感器更易于实现，但是通常认为工艺状态传感器不提供晶圆状态分析。将过程状态传感器（例如质谱仪）用于晶片状态信息将产生用于感测，优化和控制集成电路制造过程的新方法。我们使用两级差分泵质谱仪系统直接从电子回旋共振（ECR）室进行采样，以感测工艺状态并监测二氧化硅蚀刻过程中的终点。使用质谱和材料平衡建模来表征终点均匀性。具体而言，使用CF_4和D_2蚀刻气体，含CO蚀刻产物的分压在终点附近衰减，并且平均初始斜率与从光学干涉仪厚度测量确定的均匀性直接相关。改变ECR磁体的几何形状定义了蚀刻的均匀性，然后用质谱仪感测到最终的CO〜+终点信号。通过分析终点附近的CO〜+信号的初始斜率，在均匀度和质谱信号之间存在相关性。 COF_2蚀刻产品的材料平衡提供了浓度与时间的终点模型，从而证实了质谱仪信号与蚀刻均匀性之间的相关性。该模型对于在终点检测到COF_2浓度变化的任何传感器均有效。

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