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首页> 外文会议>Symposium on Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures Dec 2-6, 2002 Boston, Massachusetts, U.S.A. >FIB-TEM Characterization of Locally Restricted Implantation Damage
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FIB-TEM Characterization of Locally Restricted Implantation Damage

机译：FIB-TEM表征局限性植入损伤

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摘要

Imaging critical features by using transmission electron microscopy (TEM) or scanning electron microscopy (SEM) provides a versatile approach for nanostructure characterization. The combination of focused ion beam (FIB) technology for exposing defective sites beneath the surface is shown. Reliability testing and defect analysis by localized characterization of multilayered structures is demonstrated. TEM-imaging of a transistor gate with a locally confined radiation damage demonstrates target preparation by FIB yielding high-resolution TEM samples. The TEM imaging requires a longer sample preparation but provides high image quality (TEM). Investigation of materials previously processed with FIB revealed amorphization damage by the high energetic Ga-ion beam. This damage layer with a thickness in the range of 50 to 100 nm was confirmed in simulation. This disadvantageous damage by amorphization originating from FIB preparation of the cross-section could be removed by soft sputtering with a 250 V Ar~+ ion beam. This combined method using FIB for microsample preparation and TEM for imaging and analysis was proven to be a powerful tool the exploitation of nanostructured devices and for defect analysis on a highly localized scale.
机译：通过使用透射电子显微镜（TEM）或扫描电子显微镜（SEM）成像关键特征，为纳米结构表征提供了一种通用的方法。显示了聚焦离子束（FIB）技术的组合，用于暴露表面下的缺陷部位。通过多层结构的局部表征进行了可靠性测试和缺陷分析。具有局部局限辐射损伤的晶体管栅极的TEM成像通过FIB产生高分辨率TEM样品演示了靶标制备。 TEM成像需要更长的样品准备时间，但可提供高图像质量（TEM）。对先前用FIB处理的材料进行的研究表明，高能Ga离子束会破坏非晶化。在模拟中证实了该损伤层的厚度在50至100nm的范围内。可以通过用250 V Ar〜+离子束进行软溅射来消除源自FIB制备横截面的非晶化带来的不利损害。事实证明，这种结合使用FIB进行微量样品制备和TEM进行成像和分析的方法，是开发纳米结构器件和进行高度局部化的缺陷分析的有力工具。

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