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首页> 外文会议>Symposium on Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures Dec 2-6, 2002 Boston, Massachusetts, U.S.A. >Analytical and High-Resolution TEM Characterizations for Nanoscale Fractured Interfaces in Deep-Subquarter-Micron 256MBit DRAM Devices
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Analytical and High-Resolution TEM Characterizations for Nanoscale Fractured Interfaces in Deep-Subquarter-Micron 256MBit DRAM Devices

机译：深四分之一微米微米256MBit DRAM器件中纳米级断裂界面的分析和高分辨率TEM表征

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摘要

Interfaces, contacts, and homo- or hetero-junctions are critical components in nanometer dynamic random access memory (DRAM) semiconductor devices. With shrinkage in device dimensions, interfacial analysis by TEM becomes more and more challenging, especially in the case of investigating failure mechanisms for nanoscale FRACTURED INTERFACES where electronic signatures found to be open. In this article, fractured interfaces at several C1-type contacts (a path between a Bitline and a Metal 1 interconnector) in a deep-subquarter-micron 256Mbit DRAM device were investigated by a JEOL 2010F analytical transmission electron microscope (TEM) with field-emission gun (FEG) running at 200KV. Considering the difficulty to exactly focus the fractured nano-scale interfaces at sufficiently high magnifications, high-resolution TEM (HR-TEM) and analytical scanning transmission electron microscopy (STEM) coupled with x-ray energy dispersive spectroscopy (XEDS) elemental linescan techniques were employed to provide supplemental information from difference prospects. An in-depth understanding for the nanoscale interfacial fracture mechanisms was established, and a simple model is initiated accordingly.
机译：接口，触点和同质或异质结是纳米动态随机存取存储器（DRAM）半导体器件中的关键组件。随着器件尺寸的缩小，通过TEM进行界面分析变得越来越具有挑战性，尤其是在研究电子签名已公开的纳米级断裂界面的失效机制的情况下。在本文中，采用JEOL 2010F分析型透射电子显微镜（TEM）通过深场显微镜研究了深四分之一微米256Mbit DRAM器件中几个C1型触点（位线与金属1互连器之间的路径）的断裂界面。以200KV运行的发射枪（FEG）。考虑到难以将破裂的纳米级界面精确聚焦在足够高的放大倍数下，因此采用了高分辨率TEM（HR-TEM）和分析扫描透射电子显微镜（STEM）以及X射线能量色散光谱（XEDS）元素线扫描技术从不同的前景提供补充信息。建立了对纳米级界面断裂机理的深入理解，并据此启动了一个简单的模型。

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