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首页> 外文期刊>Journal of electroceramics >Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices
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Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices

机译：纳米尺度探测电化学：在忆故器件中导电长丝的原位TEM和STM特征

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摘要

Memristors or memristive devices are two-terminal nanoionic systems whose resistance switching effects are induced by ion transport and redox reactions in confined spaces down to nanometer or even atomic scales. Understanding such localized and inhomogeneous electrochemical processes is a challenging but crucial task for continued applications of memristors in nonvolatile memory, reconfigurable logic, and brain inspired computing. Here we give a survey for two of the most powerful technologies that are capable of probing the resistance switching mechanisms at the nanoscale - transmission electron microscopy, especially in situ, and scanning tunneling microscopy, for memristive systems based on both electrochemical metallization and valence changes. These studies yield rich information about the size, morphology, composition, chemical state and growth/dissolution dynamics of conducting filaments and even individual metal nanoclusters, and have greatly facilitated the understanding of the underlying mechanisms of memristive switching. Further characterization of cyclic operations leads to additional insights into the degradation in performance, which is important for continued device optimization towards practical applications.
机译：存储器或椎间膜器件是两端纳米因子系统，其电阻切换效应通过离子传输和氧化还原反应在纳米或甚至原子尺寸的狭窄空间中诱导。理解这种局部和不均匀的电化学过程是一个具有挑战性的，但对于在非易失性存储器中的忆阻器，可重构的逻辑和脑激发计算中的难题继续应用。在这里，我们对两种最强大的技术进行了调查，该技术能够在纳米级透射电子显微镜下探测电阻切换机构，特别是原位和扫描隧道显微镜，基于电化学金属化和价变化。这些研究产生了有关传导细丝甚至单个金属纳米单元的尺寸，形态，组成，化学状态和生长/溶出动力学的信息丰富的信息，并极大地促进了对椎间盘切换的潜在机制的理解。循环操作的进一步表征导致额外的性能下降，这对于持续的设备优化对实际应用来说是重要的。

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