Interaction Between Dislocations and Misfit Interface

机译：错位和错配界面之间的相互作用

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Mechanisms responsible for the formation of a misfit dislocation in a lattice-mismatched system have been studied using Molecular Dynamics simulations of a two-dimensional Lennard-Jones system. Results show clearly how the strain due to the lattice-mismatched interface acts as a driving force for migration of dislocations in the substrate and the over-layer and nucleation of dislocations in the overlayer edges. Moreover, we observe dislocation reactions in which the gliding planes of dislocations change such that they can migrate to the interface.

机译：已使用二维Lennard-Jones系统的分子动力学模拟研究了导致晶格失配系统中失配位错形成的机制。结果清楚地表明，由于晶格失配的界面而产生的应变如何作为驱动力，用于驱动基底中的位错迁移，覆盖层中的位错以及覆盖层边缘中的位错成核。而且，我们观察到位错反应，其中位错的滑动平面发生变化，从而它们可以迁移到界面。

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《Symposium on Structure and Mechanical Properties of Nanophase Materials- Theory and Computer Simulation vs. Experiment Nov 28-30, 2000, Boston, Massachusetts, U.S.A.》|2000年|p.4.9.1-4.9.6|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
A. Kuronen; K. Kaski; L. F. Perondi; J. Rintala;
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Helsinki University of Technology, Laboratory of Computational Engineering P.O.Box 9400, FIN-02015 HUT, FINLAND;

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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
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Interaction Between Dislocations and Misfit Interface

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