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首页> 外文期刊>Physica, B. Condensed Matter >The interaction between misfit dislocations at the metal/MgO interfaces: Atomistic study and analysis
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The interaction between misfit dislocations at the metal/MgO interfaces: Atomistic study and analysis

机译:金属/ MgO界面失配位错之间的相互作用:原子研究和分析

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摘要

Misfit dislocation is one of the most important linear defects at the interface. Its structure and mechanics have attracted much attention. However, the dislocation dynamics for some interfaces are not very clear. We study the dislocationdislocation interaction at the metal/MgO interfaces. The interaction is proved to be repulsive, and is obtained by molecular mechanics. The dislocation mass and dislocation wave are investigated, for which the dislocation wave speed is calculated by using the dislocation network model. A set of interesting results is obtained.
机译:错位错是界面上最重要的线性缺陷之一。它的结构和力学引起了很多关注。但是,某些接口的位错动力学不是很清楚。我们研究了金属/ MgO界面上的位错-位错相互作用。相互作用被证明是排斥的,并且是通过分子力学获得的。研究了位错质量和位错波,利用位错网络模型计算了位错波速。获得了一组有趣的结果。

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