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Boundary effects in thin-film thermoelectrics

机译:薄膜热电学中的边界效应

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摘要

Equatios describing the resistances to the transport of heat and electricity therough boundaries of thin-film thermoelectrics are derived. We show that these boundary resis-tances obey a boundary form of the Wiedemann-Franz law and cause a new type of thermal instability for short thermoelelctric devices. We consider boundary thermal resistances both for phonons (Kapitza resistance) and for electrons, the contact electrical resistance at the junctions, and the boundary thermoelectric effects. It is shown that the Kapitza resistance causes reduction of the effective thermal conductivity of the system only if the electron and phonon subsystems are out of equilibrium. In this case, the thermoelectric figure of merit Z can be increased by reducing the thickness of the film. The electrical contact resistance at the junctions is shown to degrade the performance of the device. However, according to the boundary Widenemann-Franz law, electrical contact resistance is accompanied by a thermal boundary resistance for the electron subsystem, which can cause an additional enhancement of Z. In some cases, this can lead to a device with ZT as high as 3 at room temperatures.
机译:得出了描述薄膜热电的粗糙边界处的热和电传输阻力的方程。我们表明,这些边界电阻服从Wiedemann-Franz定律的边界形式,并导致短热电器件的新型热不稳定性。我们考虑了声子的边界热阻(Kapitza电阻)和电子的边界热阻,结点的接触电阻以及边界热电效应。结果表明,仅当电子和声子子系统不平衡时,Kapitza电阻才会导致系统的有效导热系数降低。在这种情况下,可以通过减小膜的厚度来增加热电品质因数Z。结点的电接触电阻显示会降低器件的性能。但是,根据边界Widenemann-Franz定律,电接触电阻伴随着电子子系统的热边界电阻,这会导致Z的附加增大。在某些情况下,这可能导致ZT高达3在室温下。

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