White synchrontron X-radiation-section topography of high energy density ns-pulsed (Nd:YAG) ablation damage in Si(100) wafers

机译：Si（100）晶片中高能量密度ns脉冲（Nd：YAG）烧蚀损伤的白色同步辐射X射线截面形貌

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The penetration depth of ns-laser pulse damage in silicon single crystal semiconductor wafers is observed from (Laue transmission) white synchrontron X-radiation section topographs. Strain fields (with displacements approx 1000 times smaller than the dislocation region) are sensitively detected.

机译：硅单晶半导体晶片中的ns激光脉冲损伤的穿透深度可从（Laue透射）白色同步X射线辐射断面图观察到。敏感地检测到应变场（位移比位错区域小1000倍）。

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《Symposium F: Third International Conference on Laser Ablation (Cola'95) of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France》|1995年|p.528-531|共4页
会议地点 Strasbourg(FR);Strasbourg(FR)
作者
J.D.Stephenson;
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正文语种 eng
中图分类一般工业技术;
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4. White synchrontron X-radiation-section topography of high energy density ns-pulsed (Nd:YAG) ablation damage in Si(100) wafers [C] . J.D.Stephenson, European Materials Research Society Symposium F: international conference on laser ablation . 1996

机译：白色Synchrontron X辐射部分高能量密度NS-脉冲（ND：YAG）烧蚀损坏在Si（100）晶片中的烧蚀损伤
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8. Feasibility Experiment for Measuring Atmospheric Density Through the Altitude Range of 60 to 100 Kilometers over White Sands Missile Range [R] . Thiele, O. W. 1964

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White synchrontron X-radiation-section topography of high energy density ns-pulsed (Nd:YAG) ablation damage in Si(100) wafers

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