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首页> 外文期刊>Advanced Science Letters >Nd-YAG Ns-Pulsed Laser Induced Structural and Compositional Modification of Silicon Surface: Formation of Photoluminescent A-Si Nanostructures
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Nd-YAG Ns-Pulsed Laser Induced Structural and Compositional Modification of Silicon Surface: Formation of Photoluminescent A-Si Nanostructures

机译：Nd-YAG Ns脉冲激光诱导的硅表面结构和成分修饰：光致发光A-Si纳米结构的形成

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摘要

This paper reports on the effect of laser irradiation of second harmonic of Q switched high power Nd: YAG laser onto the polished silicon (Si) wafers in air. Scanning Electron Microscope (SEM) images shows three distinct surface structures in the focal area of laser irradiation. Raman spectra reveal that the central region consists of crystalline Si (c-Si), the intermediate region consists of nano-crystalline Si (nc-Si) as well as amorphous Si (a-Si) and the outer peripheral region consists of a-Si embedded in silicon oxide (SiO_2) matrix. The presence of different percentage of oxygen in intermediate and peripheral regions of the irradiated spot is confirmed by Energy Dispersive X-ray (EDX) spectra. The outer peripheral region of the irradiated region appearing whitish and dominated by oxygen showed photoluminescence (PL) in far red region with twin peaks. The first PL peak at 1.75 eV is due to a-Si spherical nanostructures of average particle size of 5 nm. The second PL peak at 1.94 eV is more intense and is originated because of non-bridging oxygen hole center (NBOHC) defects.
机译：本文报道了将Q开关高功率Nd：YAG激光的二次谐波激光照射到空气中的抛光硅（Si）晶片上的效果。扫描电子显微镜（SEM）图像在激光辐照的焦点区域显示了三个不同的表面结构。拉曼光谱表明，中心区域由晶体硅（c-Si）组成，中间区域由纳米晶体硅（nc-Si）以及非晶硅（a-Si）组成，外围区域由a-组成Si嵌入氧化硅（SiO_2）基质中。通过能量色散X射线（EDX）光谱确认了照射点中间和外围区域中存在不同百分比的氧气。被辐照的区域的外围区域发白并被氧为主，在具有双峰的远红色区域显示出光致发光（PL）。在1.75 eV处的第一个PL峰归因于平均粒径为5 nm的a-Si球形纳米结构。第二个PL峰在1.94 eV处更强，并且是由于非桥接氧空穴中心（NBOHC）缺陷引起的。

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