首页> 外国专利> LASER NANOSTRUCTURING AND MICROSTRUCTURING OF SILICON USING A LASER-INDUCED PLASMA FOR THE PROCESSING OF THE PROCESSING LASER BEAM

LASER NANOSTRUCTURING AND MICROSTRUCTURING OF SILICON USING A LASER-INDUCED PLASMA FOR THE PROCESSING OF THE PROCESSING LASER BEAM

机译：激光诱导等离子体对硅的纳米结构和硅微结构的加工

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摘要

Laser nanostructuring and microstructuring of silicon using a laser-induced plasma for the processing of the processing laser beam. The method according to the invention is characterised in that it comprises a step of ablation wherein a first, ablation pulsed laser beam is directed, with a fluence in the range of 10 - 100 J·cm^-2, onto the surface of a metal sample generating a laser-induced plasma, and a processing step wherein a second, processing pulsed laser beam, is directed, with a fluence of 0,3 Jcm^-2, delayed by between 0.1 and 1 microseconds in relation to the ablation laser beam, onto a silicon surface close to the laser-induced plaza such that said second laser beam passes through said plasma perpendicularly to the plasma expansion axis.

机译：使用激光诱导的等离子体对硅进行激光纳米结构化和微结构化，以处理加工激光束。根据本发明的方法的特征在于，其包括烧蚀步骤，其中引导第一烧蚀脉冲激光束，其注量在10-100J·cm ^{- 2的范围内，到产生激光诱导等离子体的金属样品表面上，然后进行处理，在该处理步骤中，处理通量为0.3 Jcm ^{-2 的第二个处理脉冲激光束被延迟相对于消融激光束在0.1至1微秒之间的时间间隔内，在接近于激光诱导的广场的硅表面上，使得所述第二激光束垂直于等离子体膨胀轴穿过所述等离子体。}}

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公开/公告号WO2016097453A1

专利类型
公开/公告日2016-06-23

原文格式PDF
申请/专利权人 UNIVERSIDAD DE MÁLAGA;
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申请/专利号WO2015ES70922
发明设计人 PALANCO LÓPEZ SANTIAGO;MARINO SALVATORE;GABÁS PÉREZ MERCEDES;ROMERO PAREJA ROCÍO;RAMOS BARRADO JOSÉ RAMÓN;
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申请日2015-12-17
分类号B23K26;B81C1;B82Y40;
国家 WO
入库时间 2022-08-21 14:17:28

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