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首页> 外文会议>Symposiuml on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France,16-19 June 1998 >X-ray analysis of the texture of heteroepitaxial gallium nitride films
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X-ray analysis of the texture of heteroepitaxial gallium nitride films

机译：X射线分析异质外延氮化镓膜的织构

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摘要

The preparation of gallium nitride films by deposition from the vapour phase (MOCVD, MBE) may suffer from an occurrence of multiple orientations and a mixture of the wurtzite (2H) and the sphalerite (3C) polytype if nucleation and deposition conditions are not optimized. We use X-ray texture diffractometry with dedicated beam optics and various scanning techniques to check for the presence of unwanted orientations and phases in a quick and semi-quantitative manner. A variety of GaN films showing multiple orientations were analyzed with respect to the nature of polycrystalline growth. These films were deposited by MOCVD on sapphire substrates. From X-ray polefigures and approximations of the texture by model components we found that the 2H and 3C orientations in these films are interrelated via stacking faults on {0001} and {111} planes, respectively. To obtain a single crystalline film orientation, a suppression of the formation of stacking faults is required. This has been achieved under optimized MOCVD conditions. As is evidennt by X-ray diffractometry, these films are single crystalline, phase pure 2H GaN films with small mosaicity spreads.
机译：如果未优化成核和沉积条件，则通过气相沉积（MOCVD，MBE）制备氮化镓膜可能会出现多种取向，并且纤锌矿（2H）和闪锌矿（3C）多型的混合物。我们使用具有专用光束光学器件和各种扫描技术的X射线纹理衍射仪，以快速和半定量的方式检查是否存在不需要的方向和相位。关于多晶生长的性质，分析了显示多种取向的各种GaN膜。这些膜通过MOCVD沉积在蓝宝石衬底上。通过X射线极图和模型组件对纹理的近似，我们发现这些薄膜中的2H和3C方向分别通过{0001}和{111}平面上的堆积断层相互关联。为了获得单晶膜取向，需要抑制堆叠缺陷的形成。这是在优化的MOCVD条件下实现的。如通过X射线衍射所证明的，这些膜是单晶的，具有小的镶嵌分布的相纯2H GaN膜。

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