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Photo-assisted anodic etching of GaN films in NaOH electrolyte with Cl ions

机译:含Cl离子的NaOH电解质中的GaN膜光辅助阳极蚀刻

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摘要

Photo-assisted anodic etching of high quality n-GaN films grown by metalorganic chemical vapour deposition (MOCVD) on sapphire substrate using sodium hydroxide (NaOH) electrolyte at room temperature is reported. It is found that the presence of chloride ions in the NaOH electrolyte accelerates the rate of photo-assisted anodic etching of GaN films. The effect of adding chloride ions in the NaOH electrolyte is to reduce the extent of the formation of gallium oxide layer on the surface. It seems that the presence of chloride ions in the NaOH electrolyte plays an important role in the photo-assisted anodic etching of n-GaN films.
机译:报道了在室温下使用氢氧化钠(NaOH)电解质在蓝宝石衬底上通过金属有机化学气相沉积(MOCVD)生长的高质量n-GaN膜的光辅助阳极蚀刻。发现在NaOH电解质中氯离子的存在加速了GaN膜的光辅助阳极蚀刻的速率。在NaOH电解液中添加氯离子的作用是减少表面上氧化镓层的形成程度。看来NaOH电解质中氯离子的存在在n-GaN膜的光辅助阳极蚀刻中起着重要作用。

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