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Microcalorimetric absorption spectroscopy in GaN-AlGaN quantum wells

机译:GaN-AlGaN量子阱中的微量量热吸收光谱

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Microcalorimetric measurements of small absorption coefficients have been performed on thin GaN-AlGaN quantum wells grown by Reactive Molecular Beam Epitaxy on Al_2O_3 substrates. In addition to strong absorption at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily detect transitions associated to the quantum well. These measurements which pave the way to a precise determination of the gap mismatch between the well and the barrier layers are combined with self consistent excitonic and envelope function calculations in the context of a model for the band line-ups which includes the piezoelectric effect.
机译:在由Al_2O_3衬底上通过反应分子束外延生长的GaN-AlGaN量子阱上,进行了小吸收系数的微量量热测量。除了在GaN缓冲层的能量和厚AlGaN势垒层的能量上具有强吸收能力外,我们还可以轻松地检测与量子阱相关的跃迁。这些测量为精确确定阱和势垒层之间的间隙失配铺平了道路,在包含压电效应的能带排列模型的背景下,将其与自洽的激子和包络函数计算相结合。

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