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首页> 外文会议>Symposiuml on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France,16-19 June 1998 >Deposition of c-BN films on diamond: influence of the diamond roughness
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Deposition of c-BN films on diamond: influence of the diamond roughness

机译：金刚石上c-BN膜的沉积：金刚石粗糙度的影响

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摘要

Diamond films deposited on Si substrates by Plansma Enhanced Chemical Vapor Deposition (PECVD) were used as substrates for c-BN thin film deposition. The c-BN films were deposited at 400 deg C by Ion Beam Assisted Deposition (IBAD) using a mixture of nitrogen and argon ions. In term of roughness, two kinds of diamond films were chosen. i.e. naturally rough diamond with roughness values ranging from 100 to 200 nm (r.m.s) and planarized diamond films with a roughness value of 16 nm (r.m.s). From IR analyses, it was shown tht the fraction of cubic phase in the c-Bn films was depending on the roughness of the diamond surface. As expected, this fraction in cubic phase was optimized in the case of smooth surfaces presenting no particular geometrical effect for the incoming energetic nitrogen and argon ions. These results clearly showed the necessity to have planarized and smooth diamond surfaces prior to the c-Bn film deposition. TEM study perfomed on c-BN films deposited on planarized diamond revealed that the films were nanocrystalline with columnar grains. A HRTEM study focused on the interface between the c-BN film and the substrate showed the commonly observed layered structure. i.e. a well textured c-BN volume lying on a h-BN basal layer with the (00.2) planes perpendicular to the substrate.
机译：通过Planesma增强化学气相沉积（PECVD）在Si基板上沉积的金刚石薄膜被用作c-BN薄膜沉积的基板。使用氮和氩离子的混合物通过离子束辅助沉积（IBAD）在400摄氏度下沉积c-BN膜。在粗糙度方面，选择了两种金刚石膜。即粗糙度值在100到200 nm（r.m.s）范围内的自然粗糙钻石和粗糙度值16 nm（r.m.s）的平面金刚石膜。通过IR分析，表明c-Bn膜中立方相的比例取决于金刚石表面的粗糙度。不出所料，在光滑表面对引入的高能氮和氩离子没有特殊几何影响的情况下，对立方相的这一部分进行了优化。这些结果清楚地表明在沉积c-Bn膜之前必须具有平坦且光滑的金刚石表面。对沉积在平坦化金刚石上的c-BN膜进行的TEM研究表明，该膜为具有柱状晶粒的纳米晶体。一项针对c-BN膜与基材之间界面的HRTEM研究显示了通常观察到的分层结构。即，纹理良好的c-BN体积位于h-BN基础层上，其（00.2）平面垂直于基材。

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