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首页> 外文会议>Synthesis, characterization, and applications of functional materials - thin films and nanostructures >Electrical Properties at Grain Boundaries Influenced by Cr~(3+) Diffusion in SnO_2.ZnO.Nb_2O_5-Films Varistor Prepared by Electrophoresis Deposition
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Electrical Properties at Grain Boundaries Influenced by Cr~(3+) Diffusion in SnO_2.ZnO.Nb_2O_5-Films Varistor Prepared by Electrophoresis Deposition

机译：电泳沉积制备的SnO_2.ZnO.Nb_2O_5-薄膜压敏电阻中Cr〜（3+）扩散对晶界电性能的影响

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摘要

SnO_2-based varistors are strong candidates to replace the ZnO-based varistors due to ordering fewer additives to improve its electrical behavior as well as by showing similar nonlinear characteristics of ZnO varistors. In this work, SnO_2-nanoparticles based-varistors with addition of 1.0 %mol of ZnO and 0.05 %mol of Nb_2O_5 were synthesized by chemical route. SnO_2.ZnO.Nb_2O_5-films with 5 um of thickness were obtained by electrophoretic deposition (EPD) of the nanoparticles on Si/Pt substrate from alcoholic suspension of SnO_2-based powder. The sintering step was carried out in a microwave oven at 1000 ℃ for 40 minutes. Then, Cr~(3+) ions were deposited on the films surface by EPD after the sintering step. Each sample was submitted to different thermal treatments to improve the varistor behavior by diffusion of ions in the samples. The films showed a nonlinear coefficient (a) greater than 9, breakdown voltage (V_R) around 60 V, low leakage current (I_F ≈ 10~(-6) A), height potential barrier above 0.5 eV and grain boundary resistivity upward of 10~7 Ω.cm.
机译：基于SnO_2的压敏电阻是替代基于ZnO的压敏电阻的强大候选产品，这是因为订购了较少的添加剂以改善其电性能，并且显示了类似的ZnO压敏电阻非线性特性。在这项工作中，通过化学路线合成了添加了1.0％mol ZnO和0.05％mol Nb_2O_5的SnO_2-纳米粒子基压敏电阻。通过将纳米颗粒从SnO_2基粉末的酒精悬浮液中电泳沉积（EPD）到Si / Pt基板上，获得了厚度为5 um的SnO_2.ZnO.Nb_2O_5-薄膜。烧结步骤在微波炉中于1000℃下进行40分钟。然后，在烧结步骤之后，通过EPD将Cr〜（3+）离子沉积在膜表面上。每个样品都经过不同的热处理，以通过离子在样品中的扩散来改善压敏电阻的性能。薄膜的非线性系数（a）大于9，击穿电压（V_R）约为60 V，漏电流低（I_F≈10〜（-6）A），高度势垒大于0.5 eV，晶界电阻率大于10约7Ω.cm.

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