Epitaxial Growth of Ferroelectric Pb(Zr,Ti)O_3 Layers on GaAs

机译：GaAs上铁电Pb（Zr，Ti）O_3层的外延生长

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Ferroelectric epitaxial Pb(Zr,Ti)O_3 (PZT) layers were grown by pulsed laser deposition on SrTiO_3/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO_3V/GaAs is abrupt at the atomic scale thanks to surface Ti pre-treatment. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoforce microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.

机译：通过脉冲激光沉积在分子束外延制备的SrTiO_3 / GaAs模板上生长铁电外延Pb（Zr，Ti）O_3（PZT）层。模板具有出色的结构质量，并且由于表面Ti的预处理，SrTiO_3V / GaAs在原子尺度上突然出现。 X射线衍射分析显示，PZT层包含a和c域。压电力显微镜实验和宏观电学特性表明PZT是铁电体。从这些测量中得出相对介电常数为164。

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来源
《Synthesis, characterization, and applications of functional materials - thin films and nanostructures》|2014年|93-98|共6页
会议地点 San Francisco CA(US)
作者
Benjamin Meunier; Lamis Louahadj; David Le Bourdais; Ludovic Largeau; Guillaume Agnus; Philippe Lecoeur; Valerie Pillard; Lucie Mazet; Romain Bachelet; Philippe Regreny; Claude Botella; Genevieve Grenet; David Albertini; Catherine Dubourdieu; Brice Gautier; Guillaume;
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Ecole Centrale de Lyon, INL-CNRS, Ecully, France;

RIBER SA, Bezons, France;

Universite Paris-Sud, Institut d'Electronique Fondamentale, Orsay, France;

LPN-CNRS, Marcoussis, France;

Universite Paris-Sud, Institut d'Electronique Fondamentale, Orsay, France;

Universite Paris-Sud, Institut d'Electronique Fondamentale, Orsay, France;

Universite Paris-Sud, Institut d'Electronique Fondamentale, Orsay, France;

Ecole Centrale de Lyon, INL-CNRS, Ecully, France;

Ecole Centrale de Lyon, INL-CNRS, Ecully, France;

Ecole Centrale de Lyon, INL-CNRS, Ecully, France;

Ecole Centrale de Lyon, INL-CNRS, Ecully, France;

Ecole Centrale de Lyon, INL-CNRS, Ecully, France;

INSA, INL-CNRS, Villeurbanne, France;

Ecole Centrale de Lyon, INL-CNRS, Ecully, France;

INSA, INL-CNRS, Villeurbanne, France;

Ecole Centrale de Lyon, INL-CNRS, Ecully, France;

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1. Thickness-driven antiferroelectric-to-ferroelectric phase transition of thin PbZrO_3 layers in epitaxial PbZrO_3/Pb(Zr_(0.8)Ti_(0.2))O_3 multilayers [J] . Ksenia Boldyreva, Lucian Pintilie, Andriy Lotnyk, Applied Physics Letters . 2007,第12期

机译：外延PbZrO_3 / Pb（Zr_（0.8）Ti_（0.2））O_3多层中PbZrO_3薄层的厚度驱动反铁电-铁电相变
2. Erratum: 'Thickness-driven antiferroelectric-to-ferroelectric phase transition of thin PbZrO_3 layers in epitaxial PbZrO_3/PbZr_(0.8)Ti_(0.2)O_3 multilayers' [Appl. Phys. Lett. 91, 122915 (2007)] [J] . Ksenia Boldyreva, Lucian Pintilie, Andriy Lotnyk, Applied Physics Letters . 2007,第20期

机译：勘误表：“外延PbZrO_3 / PbZr_（0.8）Ti_（0.2）O_3多层中的薄PbZrO_3层的厚度驱动反铁电-铁电相变” [Appl。物理来吧91，122915（2007）]
3. Ferroelectric/ Antiferroelectric Pb(Zr_(0.8)Ti_(0.2))O_3/PbZrO_3 Epitaxial Multilayers: Growth and Thickness-Dependent Properties [J] . KSENIA BOLDYREVA, LUCIAN PINTILIE, ANDRIY LOTNYK Ferroelectrics . 2008,第0期

机译：铁电/反铁电Pb（Zr_（0.8）Ti_（0.2））O_3 / PbZrO_3外延多层膜：生长和厚度依赖性
4. Strain-enhanced Dielectric and Ferroelectric Properties of Pb(Zr_(0.8)Ti_(0.2))O_3/Pb(Zr_(0.2)Ti_(0.8))O_3 Multilayer Thin Films Without Buffer Layers [C] . H. Liu, X. Gong, J. Liang Materials Science Technology Conference and Exhibition . 2007

机译：应变增强的PB（Zr_（0.8）Ti_（0.2））O_3 / PB（Zr_（0.2）Ti_（0.8））O_3多层薄膜而无缓冲层的介电和铁电性能
5. Atomic structure and ferroelectricity of Pb(Zr(1-x)Ti(x))O(3) [D] . Teslic, Srdjan 1997

机译：Pb（Zr（1-x）Ti（x））O（3）的原子结构和铁电性
6. Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr0.45Ti0.55O3 thin films on silicon in relation to grain tilt [O] . Evert P Houwman, Minh D Nguyen, Matthijn Dekkers, 2013

机译：硅上外延PbZr0.45Ti0.55O3薄膜的铁电和压电特性的固有稳定性与晶粒倾斜的关系
7. Capacitance tuning in antiferroelectric–ferroelectric PbZrO3–Pb(Zr0.8Ti0.2)O3epitaxial multilayers [O] . Lucian Pintilie, Ksenia Boldyreva, Marin Alexe, 2008

机译：排式电气 - 铁电PBZRO3-PB（Zr0.8Ti0.2）O3EpiTaxial多层的电容调谐
8. Epitaxial Pb(Zr(sub 0.40)Ti(sub 0.60))O(sub 3)/SrRuO(sub 3) and PbTiO(sub 3)/SrRuO(sub 3) multilayer thin films prepared by MOCVD and rf sputtering [R] . Foster, C. M. , Csencsits, R. , Baldo, P. M. 1994

机译：通过mOCVD和射频溅射制备的外延pb（Zr（sub 0.40）Ti（sub 0.60））O（sub 3）/ srRuO（sub 3）和pbTiO（sub 3）/ srRuO（sub 3）多层薄膜

Epitaxial Growth of Ferroelectric Pb(Zr,Ti)O_3 Layers on GaAs

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