Antenna-coupled Heterostructure Field Effect Transistors for integrated terahertz heterodyne mixers

著录项

• 来源
  《Terahertz, RF, millimeter, and submillimeter-wave technology and applications VI》|2013年|862416.1-862416.9|共9页
• 会议地点 San Francisco CA(US)
• 作者

  Alessandra Di Gaspare; Valeria Giliberti; Roberto Casini; Ennio Giovine; Florestano Evangelisti; Dominique Coquillat; Wojciech Knap; Sergey Sadofev; Raffaella Calarco; Massimiliano Dispenza; Claudio Lanzieri; Michele Ortolani;

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• 作者单位

  CNR-IFN - Institute for Photonics and Nanotechnologies, Rome, Italy;

  CNR-IFN - Institute for Photonics and Nanotechnologies, Rome, Italy,Department of Physics,Sapienza University of Rome, Rome, Italy;

  CNR-IFN - Institute for Photonics and Nanotechnologies, Rome, Italy;

  CNR-IFN - Institute for Photonics and Nanotechnologies, Rome, Italy;

  Department of Physics, University of Rome "Roma Tre", Rome, Italy;

  Laboratoire Charles Coulomb, CNRS and Universite Montpellier 2, Montpellier,France;

  Institue of High Pressure Physics, Unipress, Warsaw, Poland;

  Paul-Drude-Institut fuer Festkorperelektronik, Berlin, Germany;

  Paul-Drude-Institut fuer Festkorperelektronik, Berlin, Germany;

  Selex Sistemi Integrati S.p.A. Rome, Italy;

  Selex Sistemi Integrati S.p.A. Rome, Italy;

  CNR-IFN - Institute for Photonics and Nanotechnologies, Rome, Italy,Department of Physics,Sapienza University of Rome, Rome, Italy;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  high-electron mobility transistors; gallium nitride; terahertz (THz); integrated antenna; heterodyne detection; mixers;

  机译：高电子迁移率晶体管；氮化镓太赫兹（THz）;集成天线外差检测；搅拌机;