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Complementary GaAs junction-gated heterostructure field effect transistor fabrication for integrated circuits

机译：用于集成电路的互补Gaas结栅控异质结构场效应晶体管制造

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A new GaAs junction-gated complementary logic technology that integrates a modulation doped p-channel heterostructure field effect transistor (pHFET) and a fully ion implanted n-channel JFET has recently been fabricated. High-speed, low-power operation has been demonstrated with loaded ring oscillators that show gate delays of 179 ps/stage for a power-delay product of 28 fJ at 1.2 V operation and 320 ps/stage and 8.9 fJ at 0.8 V operation. The principal advantages of this technology include the ability to independently set the threshold voltage of n- and p-channel devices and to independently design the pHFET for high performance. A self-aligned refractory gate process based on tungsten and tungsten silicide gate metal has been used to fabricate the FETs. Novel aspects of the fabrication include the simultaneous formation of non-alloyed, refractory ohmic contacts for the junction gates and the formation of shallow p-n junctions by ion implantation.

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Baca, A. G. ; Zolper, J. C. ; Sherwin, M. E. ; Robertson, P. J. ; Shul, R. J.;
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年度 1994
页码 1-10
总页数 10
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Field Effect Transistors; Integrated Circuits; Gallium Arsenides; Synthesis;

机译：场效应晶体管;集成电路;砷化镓;合成;

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专利

1. Fabrication of Si field emitter arrays integrated with metal-oxide-semiconductor field-effect transistor driving circuits [J] . M. Nagao, Y. Tamura, T. Matsukawa, Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena . 2002,第6期

机译：集成有金属氧化物半导体场效应晶体管驱动电路的硅场致发射器阵列的制作
2. Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment [J] . Rossella Porrazzo, Alessandro Luzio, Sebastiano Bellani, ACS Omega . 2017,第1期

机译：用于在水环境中运行的互补集成电路的浇口N型有机场效应晶体管
3. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits [J] . Larentis Stefano, Fallahazad Babak, Movva Hema C. P., ACS nano . 2017,第5期

机译：集成电路可重新配置的互补单层MOTE2场效应晶体管
4. Complementary Gaas Junction-gated Heterostructure Field Effect Transistor Technology [C] . Baca, A.G., Zolper, . 2001

机译：互补Gaas结门控异质结构场效应晶体管技术
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes [O] . Stefan M Harazim, Ping Feng, Samuel Sanchez, 2011

机译：基于皱纹InGaAs纳米膜的集成敏感片上离子场效应晶体管
7. Water-Gated n‑Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment [O] . Rossella Porrazzo, Alessandro Luzio, Sebastiano Bellani, 2017

机译：用于在水环境中工作的互补集成电路的水门式n型有机场效应晶体管
8. Complementary GaAs junction-gated heterostructure field effect transistor fabrication for integrated circuits [R] . Baca, A. G., Zolper, J. C., Sherwin, M. E., 1994

机译：用于集成电路的互补Gaas结栅控异质结构场效应晶体管制造

Complementary GaAs junction-gated heterostructure field effect transistor fabrication for integrated circuits

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