Principles of VPE and MOVPE and Applications

机译：VPE和MOVPE的原理及其应用

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The fundamental laws and mechanisms behind vapour phase epitaxy (VPE) are illustrated and discussed, along with different methods and reactor architectures currently used for the growth of both elemental (Si) and compound (III-V, III-N and II-VI) semiconductors for micro- and optoelectronic devices; applications of cloride-, hydride- and metalorganic-VPE are also discussed.

机译：阐明并讨论了气相外延（VPE）背后的基本规律和机理，以及当前用于元素（Si）和化合物（III-V，III-N和II-VI）生长的不同方法和反应器架构用于微光电子设备的半导体；还讨论了氯化物，氢化物和金属有机物VPE的应用。

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来源
《Theoretical and technological aspects of crystal growth》|1998年|153-173|共21页
会议地点 Rimini(IT);Rimini(IT)
作者
N. Lovergine;
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作者单位

Istituto Nazionale per la Fisica della Materia (INFM), Unita di Lecce and Dipartimento di Scienza dei Materiali, Universita di Lecce, Via per Arnesano, 1-73100 Lecce, Italy;

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会议组织
原文格式 PDF
正文语种 eng
中图分类晶体生长;
关键词
vapour phase epitaxy; metalorganic VPE; semiconductors;

机译：气相外延金属有机物VPE;半导体;

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Principles of VPE and MOVPE and Applications

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