Temperature analysis of polysilicon thin-film transistors made by excimer laser crystallization

机译：准分子激光晶化制备的多晶硅薄膜晶体管的温度分析

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The transfer and output electrical characteristics of polysilicon thin film transistors have been measured in the temperature range from 400 to 80 K. The devices, with the active layer made by excimer laser crystallization of amorphous silicon, show high field-effect mobility values (>200 cm~2/Vs), even at low temperature, The electrical characteristics have been analyzed using a uniformly distributed density of states (DOS) model. Using the DOS derived from the values of the conductance at various temperatures, we have calculated the transfer characteristics and the threshold voltage versus temperature, obtaining a very good agreement with experimental data. The output characteristics show for all temperatures the anomalous current increase, commonly referred to as the 'kink effect', that appears at lower V_ds as the temperature is decreased. This temperature dependence is related to the threshold voltage variation with temperature direct c 1999 Elsevier Science S.A. All rights reserved.

机译：多晶硅薄膜晶体管的传输和输出电特性已在400至80 K的温度范围内进行了测量。该器件的有源层由非晶硅的准分子激光晶化制成，具有很高的场效应迁移率值（> 200） cm〜2 / Vs），即使在低温下，也使用均匀分布的状态密度（DOS）模型分析了电特性。使用从各种温度下的电导值得出的DOS，我们已经计算出传输特性和阈值电压随温度的变化，与实验数据非常吻合。输出特性显示在所有温度下，异常电流增加，通常称为“扭结效应”，随着温度降低，出现在较低的V_ds。这种温度依赖性与温度直接影响下的阈值电压变化有关（1999年Elsevier Science S.A.保留所有权利）。

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《Thin film materials for large area electronics》|1998年|p.196-199|共4页
会议地点 Strasbourg(FR)
作者
V.Foglietti; L.Mariucci; G.Fortunato;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Excimer laser crystallization; Density of states (DOS) model: Kink effect;

机译：准分子激光结晶；状态密度（DOS）模型：扭结效应;

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专利

1. A high-performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films [J] . Min Cao, Talwar S. IEEE Transactions on Electron Devices . 1996,第4期

机译：一种使用XeCl准分子激光晶化预先形成的非晶硅膜的高性能多晶硅薄膜晶体管
2. Fabrication of low-temperature-polysilicon thin-film transistors on flexible substrates using excimerlaser crystallization [J] . Yong-Hoon Kim, Won-Keun Kim, Jeong-In Han, Information Display . 2007,第12期

机译：利用准分子激光结晶在柔性基板上制备低温多晶硅薄膜晶体管
3. High-Performance Self-Aligned Bottom-Gate Low-Temperature Poly-Silicon Thin-Film Transistors With Excimer Laser Crystallization [J] . Tsai C.-C., Chen H.-H., Chen B.-T., IEEE Electron Device Letters . 2007,第7期

机译：具有准分子激光结晶的高性能自对准底栅低温多晶硅薄膜晶体管
4. Temperature analysis of polysilicon thin-film transistors made by excimer laser crystallization [C] . V. Foglietti, L. Mariucci, G. Fortunato Symposium E on thin film materials for large area electronics of the E-MRS 1998 spring conference . 1999

机译：通过准分子激光结晶制造多晶硅薄膜晶体管的温度分析
5. Modeling of polysilicon thin-film transistors formed by grain enhancement technology: Metal-induced lateral crystallization. [D] . Cheng, Chun Fai. 2005

机译：通过晶粒增强技术形成的多晶硅薄膜晶体管的建模：金属诱导的横向结晶。
6. Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors [O] . Kyungsoo Jang, Youngkuk Kim, Joonghyun Park, 2019

机译：准分子激光晶体化的Si1-xGex薄膜晶体管的电学和结构特性
7. High-Performance Short-Channel Double-Gate Low-Temperature Polysilicon Thin-Film Transistors Using Excimer Laser Crystallization [O] . Chun-Chien Tsai, Kai-Fang Wei, Yao-Jen Lee, 2007

机译：高性能短通道双栅极低温多晶硅薄膜晶体管使用准分子激光结晶
8. Excimer Laser Crystallization of Silicon Films: Artificially-Controlled Super Lateral Growth for Grain Boundary Location-Controlled and Single Crystal Island Materials for Thin Film Transistor Applications [R] . Im, J. S. , Sposili, R. S. 1998

机译：硅薄膜准分子激光晶化：用于薄膜晶体管应用的晶界限位和单晶岛材料的人工控制超横向生长

Temperature analysis of polysilicon thin-film transistors made by excimer laser crystallization

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