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Carrier transport, structure and orientation in polycrystalline silicon on glass

机译：玻璃上多晶硅中的载流子传输，结构和取向

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Polycrystalline silicon films exhibiting (220) and (400) preferential orientation in X-ray diffraction (XRD) were grown on glass substrate from gaseous mixture of SiF_4 and H_2, respectively, using a remote type plasma enhanced chemical vapor deposition (PECVD). In particular, the grains of (400) oriented texture showed smooth surface resulting from its highly selective sticking of deposition precursor on a certain site of (100) surface. Hall mobility at room temperature of (220) and (400) oriented films rose by 12 and 7 cm~2/Vs, respectively, with increasing the grain size and decreasing the structure fluctuation. In addition, the Hall mobility observed in these films is characterized by a thermally activated process given by the equation, #mu# = #mu#_0exp(-E#mu#/kT) where #mu#_0, E#mu#, k and T are the extended mobility, activation energy, Boltzmann constant and temperature, respectively. The #mu#_0 increased with increasing the grain size up to 40 cm~2/Vs at the grain size of 250 nm diameter, whereas E#mu# was kept constant at around 35 meV being independent of grainsize, where a part of the free electrons is considered to be localized in the shallow traps being in 'thermal contact' with the conduction band. direct c 1999 Elsevier Science S.A. All rights reserved.
机译：使用远程型等离子体增强化学气相沉积（PECVD），分别从SiF_4和H_2的气态混合物在玻璃基板上生长在X射线衍射（XRD）中表现出（220）和（400）优先取向的多晶硅膜。特别地，（400）取向织构的晶粒显示出光滑的表面，这是由于其沉积前体在（100）表面的特定位置上的高度选择性粘附所致。 （220）和（400）取向薄膜在室温下的霍尔迁移率分别增加了12和7 cm〜2 / Vs，随着晶粒尺寸的增加和结构波动的减小。另外，在这些薄膜中观察到的霍尔迁移率的特征在于热活化过程，该过程由以下公式给出：＃mu＃=＃mu＃_0exp（-E＃mu＃/ kT）其中，＃mu＃_0，E＃mu＃， k和T分别是扩展的迁移率，活化能，玻尔兹曼常数和温度。在250 nm直径的晶粒上，＃mu＃_0随晶粒尺寸增加至40 cm〜2 / Vs而增加，而E＃mu＃则保持恒定在35 meV左右，与晶粒尺寸无关，其中自由电子被认为位于与导带“热接触”的浅陷阱中。直接c 1999 Elsevier Science S.A.保留所有权利。

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