Deposition of microcrystalline silicon in an integrated distributed electron cyclotron resonance PECVD reactor

机译：在集成分布式电子回旋共振PECVD反应器中沉积微晶硅

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The deposition of #mu#c-Si in a low pressure high density plasma reactor is studied. Films were deposited either from pure silane or from the mixture of SiH_4 and H_2 onto glass substrates and deposition kinetics followed with kinetic phase modulated ellipsometry Growth rates of up to 0.8 nm/s were achieved with good quality material. Crystalline fraction shows a strong dependence on process pressure and exceeds 80

机译：研究了＃mu＃c-Si在低压高密度等离子体反应器中的沉积。从纯硅烷或SiH_4和H_2的混合物将薄膜沉积到玻璃基板上，然后进行沉积动力学，然后进行动力学相位调制椭圆偏振法，使用优质材料可获得高达0.8 nm / s的生长速率。结晶分数对工艺压力有很强的依赖性，超过80

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来源
《Thin film materials for large area electronics》|1998年|p.37-40|共4页
会议地点 Strasbourg(FR)
作者
P.Bulkin; A.Hofrichter; R.Brenot; B.Drevillon;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Microcrystalline silicon; Integrated distributed electron cyclotron resonance; Plasma enhanced chemical vapour deposition;

机译：微晶硅；集成分布式电子回旋共振；等离子体增强化学气相沉积;

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专利

1. Deposition of Ge-doped silica thin films for an integrated optic application using a matrix distributed electron cyclotron resonance PECVD reactor [J] . Roelene Botha, Pavel V. Bulkin, Pieter L. Swart Optical Materials . 2007,第2期

机译：使用矩阵分布电子回旋共振PECVD反应器沉积用于集成光学应用的掺Ge的二氧化硅薄膜
2. Effect of ion energy on structural and electrical properties of intrinsic microcrystalline silicon layer deposited in a matrix distributed electron cyclotron resonance plasma reactor [J] . Sanjay K. Ram, Laurent Kroely, Pavel Bulkin, Physica status solidi . 2010,第3期

机译：离子能量对基质分布电子回旋共振等离子体反应器中沉积的本征微晶硅层结构和电性能的影响
3. Microcrystalline silicon thin films deposited by matrix-distributed electron cyclotron resonance plasma enhanced chemical vapor deposition using an SiF4/H-2 chemistry [J] . Wang Junkang, Bulkin Pavel, Florea Ileana, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2016,第28期

机译：通过使用SiF4 / H-2化学物质的基质分布电子回旋共振等离子体沉积微晶硅薄膜增强了化学气相沉积
4. Deposition of microcrystalline silicon in an integrated distributed electron cyclotron resonance PECVD reactor [C] . P. Bulkin, A. Hofrichter, R. Brenot, Symposium E on thin film materials for large area electronics of the E-MRS 1998 spring conference . 1999

机译：在集成的分布式电子回旋谐振粘合剂PECVD反应器中沉积微晶硅
5. Amorphous and microcrystalline silicon thin films grown by photon assisted electron cyclotron resonance chemical vapor deposition for heterojunction solar cells and thin film transistors. [D] . Song, Young Joo. 2000

机译：通过光子辅助的电子回旋共振化学气相沉积法生长的非晶和微晶硅薄膜，用于异质结太阳能电池和薄膜晶体管。
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Process and material challenges in the high rate deposition of microcrystalline silicon thin films and solar cells by Matrix Distributed Electron Cyclotron Resonance plasma [O] . Kroely Laurent 2010

机译：矩阵分布电子回旋共振等离子体高速沉积微晶硅薄膜和太阳能电池的工艺和材料挑战
8. Nitrogen Plasma Instabilities and the Growth of Silicon Nitride by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition [R] . Pool, F. S. 1996

机译：电子回旋共振微波等离子体化学气相沉积法研究氮等离子体不稳定性及氮化硅的生长

Deposition of microcrystalline silicon in an integrated distributed electron cyclotron resonance PECVD reactor

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