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Ge:Si:O evaporated alloys as a thermosensitive layer for large area bolometers

机译:Ge:Si:O蒸发合金作为大面积辐射热计的热敏层

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A study of the composition and properties of amorphous Ge:Si:O thin films deposited at low temperature by reactive coevaporation is presented. Films with various compositions are obtained by separately controlling the evaporation rates of germanijm and silicon. The composition of films is measured by combining Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA) and energy dispersive X-ray analysis (EDX) techniques. Films are characterized by FTIR absorption spectroscopy, VIS-NIR transmittance and temperature behaviour of the electrical resistivity. The anslysis of all experimental data shows that oxygen incorporation depends on the silicon content in the films. Oxygen atoms appear mainly bonded to silicon and notto germanium. An uniformed distribution rather than a cluster structure of silicon oxide into a germanium matrix is suggested. Both optical band gap energy and thermal coefficient of the resistivity vary with composition of films. Preliminary studies of thin films with similar composition obtained using reactive sputtering from a composite target evince the coexistence of Si-O and Ge-O bonds. direct c 1999 Elsevier Science S.A. All rights reserved.
机译:提出了通过反应共蒸发在低温下沉积的非晶Ge:Si:O薄膜的组成和性能的研究。通过分别控制锗烷和硅的蒸发速率可获得具有各种组成的膜。膜的组成是通过结合卢瑟福背散射光谱法(RBS),核反应分析(NRA)和能量色散X射线分析(EDX)技术来测量的。薄膜的特征在于FTIR吸收光谱,VIS-NIR透射率和电阻率的温度行为。所有实验数据的分析表明,氧的掺入量取决于薄膜中硅的含量。氧原子似乎主要与硅键合而不与锗键合。建议在锗基体中均匀分布而不是将氧化硅形成簇结构。光学带隙能量和电阻率的热系数都随膜的组成而变化。使用反应溅射从复合靶材获得的具有相似成分的薄膜的初步研究表明,Si-O和Ge-O键共存。直接c 1999 Elsevier Science S.A.保留所有权利。

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