Improved characterization of polycrystalline silicon film, by resonant Raman scattering

机译：通过共振拉曼散射改善多晶硅膜的特性

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In this article, we report the results showing the usefulness of resonant Raman scattering to study polycrystalline silicon films, in complement to conventional Raman spectrometry. In addition to a strong enhancement of the Raman signal of crystalline silicon, the low probing depth of the UV light used in such experiments allows one to investigate very thin films and more generally near-surface regions. direct c 1999 Elsevier Science S.A. All rights reserved.

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来源
《Thin film materials for large area electronics》|1998年|p.93-97|共5页
会议地点 Strasbourg(FR)
作者
V.Paillard; P.Puech; P.Temple-Boyer; B.Caussat; E.Scheid; J.P.Couderc; B.de Mauduit;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Polycrystalline silicon; Low pressure chemical vapor deposition; Raman scattering;

机译：多晶硅低压化学气相沉积；拉曼散射;

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4. Improved characterization of polycrystalline silicon film, by resonant Raman scattering [C] . V. Paillard, P. Puech, P. Temple-Boyer, Symposium E on thin film materials for large area electronics of the E-MRS 1998 spring conference . 1999

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5. Polycrystalline silicon thin films by metal -induced growth: Formation mechanisms, characterization and applications [D] . Guliants, Elena A. 2000

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Improved characterization of polycrystalline silicon film, by resonant Raman scattering

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