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Optical properties of LPCVD silicon oxynitride

机译：LPCVD氮氧化硅的光学性质

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Low pressure chemical vapour deposition (LPCVD) silicon oxynitride films of various compositions (from pure SiO_2 to pure Si_3N_4) were deposited by changing the relative gas flow ratio. The effects of oxygen on the physical properties of the films were studied by spectroellipsometry (using Bruggeman approximation and Wemple Di Domenico model) and infrared spectroscopy. Refractive index measured by spectroellipsometry method is studied as a function of some deposition parameters: temperature of deposition, gases fluxes ratio. The high value of deposition temperature means low values in refractive index. More oxygen into films decreases the refractive index. The refractive index dispersion is studied by single-oscillator Wemple Di Domenico model. The optical band gap varies monotonically from 5 eV for silicon nitride, to 9eV for HTO LPCVD silicon dioxide and for the studied silicon oxynitride was found to be between 5 and 6 eV. direct c 1999 Elsevier Science S.A. All rights reserved.
机译：通过改变相对气体流量比，可以沉积各种组成（从纯SiO_2到纯Si_3N_4）的低压化学气相沉积（LPCVD）氮氧化硅膜。通过分光椭圆光度法（使用Bruggeman近似和Wemple Di Domenico模型）和红外光谱研究了氧气对薄膜物理性能的影响。研究了通过分光光度法测量的折射率与某些沉积参数的关系：沉积温度，气体通量比。沉积温度的高值意味着折射率的低值。更多的氧气进入薄膜会降低折射率。通过单振荡器Wemple Di Domenico模型研究折射率色散。光学带隙从氮化硅的5 eV单调变化到HTO LPCVD二氧化硅的9 eV单调变化，发现所研究的氧氮化硅在5 eV和6 eV之间。直接c 1999 Elsevier Science S.A.保留所有权利。

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