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首页> 外文会议>Thin Film Transistors 9 (TFT 9) >Development of Integrated Electronics on Silicon-on-Glass (SiOG) Substrate
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Development of Integrated Electronics on Silicon-on-Glass (SiOG) Substrate

机译：玻璃上硅（SiOG）基板上集成电子的开发

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摘要

Development of integrated electronics on the silicon-on-glass (SiOG) substrate is presented. The SiOG material technology, under development by Corning Incorporated, consists of anodic bonding and an implant-induced separation to transfer a single crystalline silicon film onto a glass substrate. The silicon-glass interface region is characterized by an ultra-strong and thermally stable bond, and includes an in situ barrier layer that is free of mobile ions. Key aspects of the low temperature (< 600 ℃) CMOS device fabrication process are described, with an emphasis on the design tradeoffs involved to maintain process simplicity (i.e. 6-level mask count, and no V_t adjustment). The discussion also provides specific details of the device structure and operation, including mechanisms that compromise device performance identified through electrical simulation.
机译：介绍了玻璃上硅（SiOG）基板上集成电子器件的开发。康宁公司（Corning Incorporated）正在开发的SiOG材料技术，包括阳极键合和注入诱导分离，以将单晶硅膜转移到玻璃基板上。硅玻璃界面区域的特征在于超强且热稳定的键合，并包括一个不含移动离子的原位阻挡层。描述了低温（<600℃）CMOS器件制造工艺的关键方面，并着重强调了为保持工艺简单性而进行的设计折衷（即6级掩膜计数和无V_t调整）。讨论还提供了设备结构和操作的具体细节，包括损害通过电仿真识别的设备性能的机制。

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  • 来源
    《Thin Film Transistors 9 (TFT 9)》|2008年|371-380|共10页
  • 会议地点 Honolulu HI(US)
  • 作者

    R. G. Manley; G. L. Fenger; P. M. Meller; K. D. Hirschman; C. A. Kosik Williams; D.F. Dawson-Elli; J. G. Couillard; J. S. Cites;

  • 作者单位

    Microelectronic Engineering Dept., Rochester Institute of Technology, Rochester, New York, 14623, USA;

    Microelectronic Engineering Dept., Rochester Institute of Technology, Rochester, New York, 14623, USA;

    Microelectronic Engineering Dept., Rochester Institute of Technology, Rochester, New York, 14623, USA;

    Microelectronic Engineering Dept., Rochester Institute of Technology, Rochester, New York, 14623, USA;

    Corning Incorporated, Science and Technology, Corning, New York 14870, USA;

    Corning Incorporated, Science and Technology, Corning, New York 14870, USA;

    Corning Incorporated, Science and Technology, Corning, New York 14870, USA;

    Corning Incorporated, Science and Technology, Corning, New York 14870, USA;

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  • 正文语种 eng
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