Dept. of Electronic Engineering, Ming-Hsin University of Science and Technology No. 1 Hsin-Hsing Road, Hsin-Fong, Hsin-Chu, 304, Taiwan Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei, 10601, Taiwan;
Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei, 10601, Taiwan;
Department of Material Science Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan;
National Nano Device Laboratories, Hsinchu 30078, Taiwan;
Department of Material Science Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan;
Dept. of Electronic Engineering, Ming-Hsin University of Science and Technology No. 1 Hsin-Hsing Road, Hsin-Fong, Hsin-Chu, 304, Taiwan;
Institute of Mechatronic Engineering, National Taipei University of;
机译:UV /可见光照射下AlGaN / GaN异质结构装置的源极排出电流异常现象
机译:具有π形有源区的源/漏极并列多晶硅薄膜晶体管,可提高器件可靠性
机译:精确地建模凹入式P-HEMT器件中的漏极至源极电流
机译:可见光源扰乱CLC Poly-Si N-TFT器件的源/漏电流
机译:从可见/红外成像辐射计套件昼/夜波段观察到的人工光源估算气溶胶光学厚度的改进方法。
机译:凸源/漏极(RSD)和垂直掺杂漏极(LDD)多Si薄膜晶体管
机译:凸源/漏极(RSD)和垂直掺杂漏极(LDD)多Si薄膜晶体管
机译:微放电和稀土掺杂波导器件:激光器和传感器的可见光和紫外光源