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Visible Light Source Disturbing the Source/Drain Current of CLC Poly-Si n-TFT Device

机译:可见光源干扰CLC多晶硅n-TFT器件的源极/漏极电流

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摘要

The development of laser-crystallized single-grain-like polycrystalline silicon (poly-silicon) thin-film transistors (poly-Si TFTs) on glass substrates extends current applications of TFTs as pixel switches to prophetical circuits and current drivers. The TFT device is directly exposed by light from backside light source and outside light source beyond the display screen. Therefore, if the impact of extra light intensity possibly produces the instable operation of this device with continuous-wave (cw) laser crystallization (CLC) poly-Si channel, these device characteristics should be examined. For CLC poly-Si n-TFT device, it was fabricated successfully by C. Chen's team (1). This TFT device demonstrates excellent electron mobility, up to 530 cm~2/V-s, is greater than that with low-temperature poly-silicon (LTPS) fabrication technology. In this study, the species of the tested light sources with light emitting diodes (LEDs) contained green and blue wavelengths. From the experimental data, we observed while the TFT glass substrate was exposed by a specified LED, some current-voltage (I-V) characteristic curve of this TFT device was slightly shifted or demonstrated a wavelet phenomenon.
机译:在玻璃基板上激光晶化的单晶状多晶硅薄膜晶体管(poly-Si TFT)的发展将TFT的当前应用扩展为像素开关到预想电路和电流驱动器的应用。来自背面光源和外部光源的光直接将TFT设备暴露在显示屏之外。因此,如果额外的光强度的影响可能导致使用连续波(cw)激光结晶(CLC)多晶硅通道的该设备不稳定运行,则应检查这些设备的特性。对于CLC多晶硅n-TFT器件,它是由C. Chen的团队(1)成功制造的。该TFT器件具有出色的电子迁移率,高达530 cm〜2 / V-s,比低温多晶硅(LTPS)制造技术的迁移率更高。在这项研究中,带有发光二极管(LED)的被测试光源的种类包含绿色和蓝色波长。从实验数据中,我们观察到TFT玻璃基板被指定的LED曝光时,该TFT器件的一些电流-电压(I-V)特性曲线略有偏移或显示出小波现象。

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  • 会议地点 Honolulu HI(US)
  • 作者单位

    Dept. of Electronic Engineering, Ming-Hsin University of Science and Technology No. 1 Hsin-Hsing Road, Hsin-Fong, Hsin-Chu, 304, Taiwan Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei, 10601, Taiwan;

    Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei, 10601, Taiwan;

    Department of Material Science Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan;

    National Nano Device Laboratories, Hsinchu 30078, Taiwan;

    Department of Material Science Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan;

    Dept. of Electronic Engineering, Ming-Hsin University of Science and Technology No. 1 Hsin-Hsing Road, Hsin-Fong, Hsin-Chu, 304, Taiwan;

    Institute of Mechatronic Engineering, National Taipei University of;

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