Study of InAs quantum dots in GaAs prepared on misoriented substrates

机译：在取向错误的衬底上制备的GaAs中InAs量子点的研究

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Optical properties of quasi zero-dimensional semiconductor quantum dots were studied by photoluminescence and Raman spectroscopy. The dependence of photoluminescence on substrate orientation and Raman spectra of single and multiple InAs/GaAs quantum dot structures are reported. The samples were grown on (100) oriented GaAs substrates without and with 3 deg misorientation towards (110) by metal-organic vapor phase epitaxy in the Stranski-Krastanow regime. Strong dependence of photoluminescence properties of the quantum dot structures on substrate misorientation is shown. The InAs-related features are observed in the macro-Raman spectra and micro-Raman spectra. The effects of confinement, alloying and strain on PL and on phonon spectra are discussed.

机译：通过光致发光和拉曼光谱研究了准零维半导体量子点的光学性质。报道了光致发光对单个和多个InAs / GaAs量子点结构的衬底取向和拉曼光谱的依赖性。在Stranski-Krastanow体制下，通过金属-有机气相外延，使样品在（100）取向的GaAs衬底上生长，并且没有朝向和向（110）倾斜3度的情况。显示了量子点结构的光致发光性质对衬底取向错误的强烈依赖性。在宏观拉曼光谱和微观拉曼光谱中观察到InAs相关特征。讨论了约束，合金化和应变对PL和声子谱的影响。

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来源
《Thin films epitaxial growth and nanostructures》|1998年|p.80-83|共4页
会议地点 Strasbourg(FR)
作者
J. Oswald; E. Hulicius; V. Vorlicek; J. Pangrac; K. Melichar; T. Simecek; G. Lippold; V. Riede;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
Quantum dots; Photoluminescence; Raman spectroscopy;

机译：量子点;光致发光；拉曼光谱;

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专利

1. Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD [J] . M.-Y. Hsu, S.-F. Tang, C.-D. Chiang, Thin Solid Films . 2006,第1a2期

机译：利用MOCVD法在取向不正确的GaAs衬底上生长的InAs量子点的光复合发射特性和表面形貌
2. Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates [J] . A S Shkolnik, E B Dogonkin, V P Evtikhiev Nanotechnology . 2001,第4期

机译：从在取向错误的基板上生长的自组织InAs / GaAs量子点的光致发光衰减时间测量
3. Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0] direction [J] . V.P. Evtikhiev, V.E. Tokranov, A.K. Kryganovskii Journal of Crystal Growth . 1999,第MAY期

机译：在邻近的GaAs（0 0 1）表面上取向为[0 1 0]方向的InAs量子点MBE的特性
4. Study of InAs quantum dots in GaAs prepared on misoriented substrates [C] . J. Oswald, E. Hulicius, V. Vorlicek, E-MRS conference on thin films epitaxial growth and nanostructures . 1998

机译：对吸收基材制备的GaAs中的InAs量子点研究
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

机译：在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
6. Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures [O] . Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, 2017

机译：变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
7. Quantum dot size dependent influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots [O] . Mlinar, V., Peeters, F. M. 2006

机译：量子点尺寸依赖于衬底取向对衬底取向的影响 Inas / Gaas量子点的电子和光学性质
8. Photoluminescence Decay Time Measurements from Self-Organized InAs/GaAs Quantum Dots Grown on Misoriented Substrates. [R] . Shkolnik, A. S., Dogonkin, E. B., Evtikhiev, V. P., 2001

机译：在错误定向衬底上生长的自组织Inas / Gaas量子点的光致发光衰减时间测量。

Study of InAs quantum dots in GaAs prepared on misoriented substrates

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