Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy

机译：电容光谱探测Ge / Si异质结构中零维空穴态的形成

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Hole energy spectrum in Ge/Si(001) heterostructures grown by molecular-beam epitaxy are studied using capacitance spectroscopy at a temperature range of 4.2-300 K. We find that the formation of Ge islands as the effective film thickness exceeds six monolayers leads to the appearance of the zero-dimensional hole states associated with Ge quantum dots. Analysis of the capacitance-voltage characteristics of structures containing the quantum-dot 'atoms' and the quantum-dot 'molecules' reveals the Coulomb charging effect.

机译：在4.2-300 K的温度范围内，通过电容光谱研究了通过分子束外延生长的Ge / Si（001）异质结构中的空穴能谱。我们发现，当有效膜厚超过六个单层时，Ge岛的形成导致与Ge量子点相关的零维空穴状态的出现。对包含量子点“原子”和量子点“分子”的结构的电容-电压特性的分析揭示了库仑带电效应。

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来源
《Thin films epitaxial growth and nanostructures》|1998年|p.332-335|共4页
会议地点 Strasbourg(FR)
作者
A.I. Yakimov; A.V. Dvurechenskii; A.I. Nikiforov; O.P. Pchelyakov;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
Capacitance spectroscopy; Quantum dots; Silicon; Germanium;

机译：电容光谱量子点;硅;锗;

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4. Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy [C] . A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, E-MRS conference on thin films epitaxial growth and nanostructures . 1998

机译：用电容光谱法探测Ge / Si异质结构的形成零尺寸孔状态
5. Probing Transition Metal Dichalcogenide Monolayers and Heterostructures by Optical Spectroscopy and Scanning Tunneling Spectroscopy. [D] . Hill, Heather M. 2016

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Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy

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