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Annealing of CaF_2 adlayers grown on Si(111): investigations of the morphology by atomic force microscopy

机译:Si(111)上生长的CaF_2附加层的退火:原子力显微镜研究形态

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The successive annealing of CaF_2 adlayers deposited at low temperature (400 deg C) on vicinal Si(111) has been studied in situ by ultra high vacuum atomic force microscopy (UHV-AFM). Monoatomic islands on top of closed CaF_2 layers observed for the as-deposited adlayers vanish during the first annealing steps (<600 deg C). In addition notches of monoatomic height are formed at the previous straight adlayer steps of the CaF_2 terraces. They have triangular shape in agreement with the non-polar {111} facets of the B-orientated CaF_2 adlayer. For higher annealing temperatures the CaF_2 is partly dissociated so that Ca clusters are formed on top of the adlayer steps. This extraordinary nucleation site is attributed to the partial lateral relaxation of the CaF_2 adlayer.
机译:通过超高真空原子力显微镜(UHV-AFM)原位研究了在低温(400摄氏度)下沉积在邻近Si(111)上的CaF_2附加层的连续退火。在最初的退火步骤(<600摄氏度)期间,观察到的沉积态沉积层在封闭的CaF_2层顶部的单原子岛消失了。此外,在CaF_2平台的先前笔直的Adlayer步骤中形成了单原子高度的缺口。它们具有三角形的形状,与B取向的CaF_2附加层的非极性{111}面一致。对于较高的退火温度,CaF_2被部分解离,从而在簇层的顶部形成钙簇。这个非凡的成核位点归因于CaF_2附加层的部分横向松弛。

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